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Bandgap Tuning of Carbon Nanotubes with a micro-size strain device

Bandgap Tuning of Carbon Nanotubes with a micro-size strain device
用微型应变装置调节碳纳米管的带隙
批准号:
23656021
负责人:
MAKI Hideyuki
金额:
$2.5万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2012

项目摘要

项目成果

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相关文献

中文摘要
翻译
传统的带隙工程是现代半导体工艺的重要技术之一,但由于传统的带隙工程是由生长过程中的成分控制或掺杂控制引起的,因此很难通过掺杂来实现带隙的调制。
英文摘要
The conventional bandgap engineering, which is one of the important techniques for the modern semiconductor technology, has been induced by the composition or doping control in the growth process; therefore, it is very difficult to modulate the band by th
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DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [Z. Tang, H. Ago, E. Shikoh, Y. Ando, T. Shinjo and M. Shiraishi, 石谷善博,今井大地,王新強,草部一秀,吉川明彦, 森達也 ,津谷大樹,牧英之]
通讯作者: 森達也 ,津谷大樹,牧英之
Nanowire growth on a CNT and low-dimensional superconducting properties for quantum devices
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    18K19025
  • 项目类别:
    Grant-in-Aid for Challenging Research (Exploratory)
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    $4.08万
  • 财政年份:
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  • 财政年份:
    2016
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Ultra-high-speed and small-footprint carbon nanotube light emitters
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  • 项目类别:
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