Growth of RT multiferroic artificial superlattice using ALD

本研究的目的是开发不含铅的铁电材料。特别是，这项研究已经进行了一层一层的BiFeO3使用原子层沉积（ALD）生长的目的。ALD的优点之一是可以在低温下生长，首先制备了含Fe或Bi的氧化物薄膜。以Bi（ph）_3和Fe（Cp）_2为Bi和Fe的低温易分解前驱体，成功地制备了Bi和Fe的氧化膜。此外，Bi（ph）3和Fe（Cp）2的组合导致使用ALD的BiFeO 3的逐层生长。

The aim of the present study is to develop ferroelectric materials without lead which is harmful to environment. In particular, this study has been carried out with the aim of layer-by-layer growth of BiFeO3 using atomic layer deposition (ALD). One of the advantage of ALD is the ability of growth at low temperature.At first, oxide films which include either Fe or Bi were fabricated. Using Bi(ph)3 and Fe(Cp)2 as Bi and Fe precursors which are easily decomposed at low tenperature, oxide films of Bi and Fe were successfully formed. In addition, the combination of Bi(ph)3 and Fe(Cp)2 results in the layer-by-layer growth of BiFeO3 using ALD.