Basic Theory and Applications for Next-Generation Power Amplifier Achieving High Power-Conversion Efficiency and Low Cost
Basic Theory and Applications for Next-Generation Power Amplifier Achieving High Power-Conversion Efficiency and Low Cost
批准号:
23760253
负责人:
SEKIYA Hiroo
金额:
$2.83万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2013
中文摘要
本研究的目的是为下一代功率放大器建立一种既能提高功率转换效率又能降低成本的开关技术理论。通过在主放大器上施加具有谐波频率的注入电流,可以在开关处获得平稳的电流和电压。此外,还提出并实现了放大器的数值设计算法。通过对射频电源、DC-DC转换器、灯镇流器等具体应用的研究和开发,验证了所建立的理论和实现的设计工具的有效性。所开发的开关技术由于其功率转换效率的提高和成本的降低而非常有效,有望在电子领域得到广泛的应用。
英文摘要
The purpose of this research is to establish the theory of a switching technique for next-generation power amplifiers, which achieves both power-conversion efficiency enhancement and cost reduction. By applying injection current with harmonics frequency to main amplifier, it is possible to achieve smooth current and voltage at the switches. Additionally, numerical design algorithm for designing the amplifiers was proposed and implemented. Through the research and development of the concrete applications, such as RF power source, dc-dc converter, and lamp ballast, the validities of the established theory and the implemented design tool could be shown. The developed switching techniques is quite effective because of its power-conversion efficiency enhancement and cost reduction and is expected to be used as many applications in the electronics field.
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Fundamental study on drain efficiency of EDSM/EPWM transmitter using class-EM amplifier
使用EM类放大器的EDSM/EPWM发射机漏极效率的基础研究
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[M. Taromaru, N. Oyama, H. Sekiya, and T. Suetsugu]
通讯作者:
and T. Suetsugu
EM級増幅器
EM级放大器
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[]
通讯作者:
E_M級増幅器
E_M类放大器
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[]
通讯作者:
Inductively coupled wireless power transfer with class-E2 DC-DC converter
使用 E2 类 DC-DC 转换器进行电感耦合无线功率传输
DOI:
10.1109/ecctd.2013.6662278
发表时间:
2013
期刊:
2013 European Conference on Circuit Theory and Design (ECCTD)
影响因子:
--
作者:
[T. Nagashima, Kazuhide Inoue, Xiuqin Wei, Elisenda Bou, E. Alarcón, H. Sekiya]
通讯作者:
H. Sekiya
Behaviors of EER Transmitter with Class―E Amplifier due to MOSFET Parasitic Capacitances
带有 E 类放大器的 EER 发送器因 MOSFET 寄生电容而产生的行为
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[Xiuqin Wei, T. Nagashima, H. Sekiya]
通讯作者:
H. Sekiya
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