Kondo effect in charge transfer complexes

本课题旨在在导电表面和薄绝缘层上生长超薄电荷转移（CT）配合物薄膜，并研究其电子结构。整体上，CT盐呈现出相关电子的有趣现象。在薄膜中，这些仍未被探索。我们设想将一些低维度和大量发现的许多身体效应引入单层体系。我们之前的结果表明，一维有序已经发生在金属的界面上，有一维电子带的证据。我们计划通过削弱分子-底物相互作用的强度来增强分子π态之间的重叠，从而解决界面上是否存在CT，从而增强电子带的分子特性（即电子迁移率）。我们的目标是使用低温扫描隧道光谱来解析分子指纹，它们的化学状态特征，以及指示电子色散的非局部状态，并使用协同掺杂来修饰它们。

This proposal aims to grow ultra thin films of charge transfer (CT) complexes on conducting surfaces and thin insulating layers, and to study their electronic structure. In bulk, CT salts present interesting phenomena characteristic of correlated electrons. In thin films, these remain unexplored. We envisage importing to the monolayer regime some of the low dimensional and many body effects found in bulk. Our previous results indicate that one-dimensional ordering takes place already at the interface of a metal, with evidence of one-dimensional electronic bands. We plan to resolve if CT exists at the interface, to enhance the molecular character of the electronic bands (i.e. electron mobility) by enhancing overlap between molecular π-states through the weakening of the strength of molecule-substrate interactions. Our goal is to resolve molecular fingerprints, characteristic of their chemical state, and non-local states, indicative of electronic dispersion, using low temperature scanning tunnelling spectroscopy, and to modify them, employing concerted doping.