Development of High-performance Rectenna Diode for Mid-infrared / THz Optical Power Conversion

这一年的研究进展主要包括三个方面：1.阐明了电场集中效应下MIM二极管中的电子隧穿行为。建立考虑MIM二极管结构和影响的电子隧穿综合模型。设计并制作带有纳米颗粒(NPs)的MIM二极管，以实现电场集中效应。利用有限元方法对MIM二极管的结构进行了优化，并利用原子层沉积法制备了铂纳米粒子阵列。对含NPs的MIM二极管进行了表征，与不含NPs的MIM二极管相比，整流性能提高了约300倍。

During this year, the progress mainly including 3 parts:1. Clarify the electron tunneling behavior in MIM diodes with electric field concentration effect. Establish a comprehensive model for electron tunneling that considers the configuration and effect of the MIM diode.2. Design and fabricate MIM diodes with nanoparticles (NPs) to achieve electric field concentration effect. Optimize the configuration of the MIM diode using finite element method and fabricate a platinum NPs array using atomic layer deposition.3. Characterize the MIM diode with NPs, and demonstrate a significant improvement of ~300 times in rectification performance comparing with the MIM diode without NPs.