PMRAM: Initial chip design for a novel non-volatile low-power piezomagnetic random access memory to drive the future of IOT

LoMaRe由四名研究人员于2017年创立，旨在将他们发现的一类新型材料的特性商业化。人类正在触及当前计算机存储和内存技术的物理限制，其基本基础是在70年代设计的。在这些技术的进一步发展的严重障碍已经开始出现在2010年代后期产生的性能，成本和环境（能源消耗）相关的问题。通过使用这些新的材料，PMRAM允许存储和数据的操作相结合的DRAM的高性能特性与NAND闪存的非易失性，同时保持一个非常低的功率包络。此外，PMRAM在速度、密度、能耗和性价比方面优于现有的和竞争性新兴存储器技术。这些特性将允许将DRAM的性能和NAND FLASH的非易失性联合收割机组合到未来的存储类存储器（SCM）概念中。该项目将从TRL4到TRL6\获得PMRAM。

LoMaRe was founded in 2017 by four researchers to commercialise the properties of a novel class of material they discovered. Humanity is hitting the physical limitations of current computer storage and memory technologies, the basic foundations of which were designed in the 70ies. Serious hurdles in the further development of these technologies have started to appear in the late 2010s creating performance, cost and environmental(energy consumption) related issues.By using these novel materials, PMRAM allows for storage and manipulations of data combining high performance characteristics of DRAM with nonvolatility of NAND FLASH while maintaining a very low power envelope. In addition, PMRAM outperforms existing and competing emerging memory technologies in speed, density, energy-consumption, and value for money. These characteristics would allow to combine the performance of DRAM and nonvolatility of NAND FLASH into a future storage class memory(SCM) concept. This project will get PMRAM from TRL4 to TRL6\.