To demonstrate the feasibility of producing low cost, high intensity LEDs using Anvil’s stress relief IP to grow high quality GaN on 3C-SiC on large diameter Si substrates.

Anvil Semiconductors开发了一种技术，可以在大直径Si衬底上生长器件质量的3C-SiC晶片，用于功率器件，以硅的价格提供SiC的性能和效率优势。IP解决了在Si上生长SiC时不可避免的应力问题。该可行性研究确定了IP是否适用于具有3C-SiC的LED，该3C-SiC为大直径Si晶片上的GaN生长提供了有效的缓冲层。应力消除技术还可以使得GaN的生长具有降低的位错密度，从而导致低成本、高强度LED。这样的成本/性能改进将对LED市场产生破坏性影响，使得用固态照明替代白炽灯和紧凑型荧光灯在商业上可行，可能将世界能源消耗减少约11%。

Anvil Semiconductors has developed technology that enables the growth of device quality 3C-SiC wafers on large diameter Si substrates for use in power devices, delivering the performance and efficiency benefits of SiC at the price of silicon. The IP resolves the problem of the stress which is inevitable when growing SiC on Si. This feasibility study determines whether the IP has applicability to LEDs with 3C-SiC providing an effective buffer layer for GaN growth on large diameter Si wafers. The stress relief technology may also enable the growth of GaN with reduced dislocation density, leading to low cost, high intensity LEDs. Such a cost/performance improvement would have a disruptive effect on the LED market making replacement of incandescent lights and compact fluorescents with solid state lighting commercially viable, potentially reducing the world energy consumption by some 11%.