Novel photo-resist material for next generation micro-chips

“不可抗拒材料公司（IM）正在为半导体行业开发下一代光刻胶材料。光刻胶用于微芯片的制造过程中。它作为一种掩模，通过一种称为光刻的工艺将图案蚀刻到硅上。正是这些蚀刻在硅上的特征充当了现代微芯片的“电线”。因此，抗蚀剂对半导体工业至关重要，只有通过光刻技术和抗蚀剂技术的不断进步，微电子器件的尺寸才能不断缩小。然而，目前的光刻技术，使用的辐射是193nm波长的光，已经达到极限，无法满足2018年以后的行业目标（波长对于目标微芯片特征尺寸来说太大了）。为了解决这个问题，新一代光刻技术计划于2019年投入商业应用，称为极紫外光刻（EUV）。在极紫外光刻技术中，辐射波长减少到13.5nm，从而实现更高分辨率的图案，从而实现更小的微芯片特征。然而，目前还没有一种抗阻解决方案能够满足2019年计划引入EUV的行业目标。这为半导体行业创造了巨大的需求和机遇。通过这个项目，IM将开发一种专利的EUV抵抗材料，以直接满足这一需求和机会。”

"Irresistible Materials (IM) is developing next generation photo-resist materials for the semiconductor industry. A photo-resist is used within the manufacturing process of microchips. It acts as a type of mask that enables patterns to be etched into silicon through a process known as lithography. It is these features etched into silicon that act as the 'wires' of the modern day microchip.Resists are thus critical to the semiconductor industry, and the ever-decreasing size of microelectronics is possible only through continuous advancements in lithography and resist technologies.However, current lithography technology, where the radiation used is 193nm wavelength light, is reaching its limit, and is unable to meet industry targets past 2018 (the wavelength is too large for the targeted microchip feature sizes). To address this, a new generation of lithography technology is planned for commercial introduction in 2019, called Extreme Ultraviolet Lithography (EUV).In EUV lithography, the wavelength of the radiation is reduced to 13.5nm enabling higher resolution patterns, and thus smaller micro-chip features. However, there is presently no resist solution that meets industry targets for the planned introduction of EUV in 2019\. This creates a major need and opportunity within the semiconductor industry. Through this project, IM will develop a patented EUV resist material to directly addresses this need and opportunity."