CDS--TE-SILICON SCINTILLATION DETECTORS

探测X射线和伽马射线的发光材料是一个关键 用于许多医学成像系统的组件。然而，现在的闪光灯- 半导体X射线探测器与闪烁体光线的匹配性差 (约400 nm)和光电二极管响应(约为波长/最大 1,000 nm)，这限制了它们的性能。 探测器将使用一种新的闪烁体--掺Te 硫化镉，大容量(约500立方厘米)，高质量 采用改进的气相生长技术(MVPG)生长单晶球。 硫化镉：TE是一种坚固(4 Mho)、致密(4.8 g/cm3)的材料，其亮度 (约为NaI：Ti的70%)，中等速度(小于300 ns)，红色 (730 Nm)发光与硅光电二极管(SiPD)匹配良好 敏感度。 提出了五项工作：(1)发展MVPG技术，生产大型、 高品质单质硫化镉：TE晶体；(2)合成和升华硫化镉和 CdTe元件材料；(3)制备MVPG单晶：Te晶体变化 (4)测量Cd S：Te发光材料， 具有生长条件的光学和结构性质；以及(5) 医用TeSiPD X射线探测器样机的研制与评价 申请。 在第二阶段，CDS：TE MVPG技术将得到优化，以生产高质量的 高质量、坚固耐用、紧凑、低功率的光子探测器。 建议的商业应用： 潜在的商业应用程序不可用。

Luminescent materials for detecting X-rays and gamma-rays are a critical component for many medical imaging systems. However, present scintillator- semiconductor X-ray detectors have a poor match of scintillator light (approximately 400 nm) and photodiode response (lambda/max approximately 1,000 nm) which limits their performance. Detectors will be developed using a new scintillator, tellurium doped cadmium sulfide, realized in large (approximately 500 cm3), high quality single crystal boules by modified Vapor Phase Growth (mVPG) technology. CdS:Te is a rugged (4 Mho), dense (4.8 g/cm3) material whose bright (approximately 70% of NaI:TI), moderately fast (less than 300 ns), red (730 nm) luminescence is well matched to Silicon PhotoDiode (SiPD) sensitivity. Five tasks are proposed: (1) Develop the MVPG technology to produce large, high quality single CdS:Te crystals; (2) Synthesize and sublimate CdS and CdTe component material; (3) Produce MVPG single CdS:Te crystals varying growth conditions and Te content; (4) Measure the CdS:Te luminescent, optical, and structural properties with growth condition; and (5) Construct and evaluate prototype CdS:TeSiPD X-ray detectors for medical applications. In Phase II the CdS:Te MVPG technology will be optimized to produce high- quality, rugged, compact, low-power photon detectors. PROPOSED COMMERCIAL APPLICATION: Potential commercial application not available.