Design, simulation and fabrication of silicon carbide IGBTs - 1=Information and communication technologies (ICT) 2=Non CMOS Device Technology

碳化硅(SIC)N沟道IGBT具有实现新型高效超高压(10千伏+)应用的潜力，如智能电网和高压直流输电，从而实现低碳社会。然而，到目前为止，由于与制造相关的相当大的挑战，只有四个研究小组报告了它们的成功开发。华威的这家电力集团以及来自纽卡斯尔和剑桥的合作伙伴，现在正在接受挑战，成为欧洲首批开发这些变革性设备的集团之一。一旦建立起来，我们就有能力在这个羽翼未丰的领域突破迄今所取得的成就。盖伊的项目将参与这些设备的全面开发。与内部材料开发团队合作，他将对生产的厚外延进行表征和基准测试。他将通过在来自碳化硅外延反应堆的晶片上实施既定的内部MOSFET和PIN二极管配方来学习使用净化室。然后，他将对这些进行修改，使其适合在新型IGBT基板上实施，使用有限元模拟来设计和布局新的掩模组。像任何博士一样，预计盖伊将参与整个研发过程，他将自由地跟踪在此过程中出现的更有趣的结果，无论是新颖的设计、处理步骤、设计拆分，还是设备特性背后的物理原理。

Silicon carbide (SiC) N-channel IGBTs have the potential to enable new and highly efficient ultrahigh voltage (10 kV+) applications such as the Smart Grid and HVDC, enabling a low carbon society. However, to date, only four research groups have reported on their successful development, due to the considerable challenge associated with their fabrication. The power group at Warwick along with partners from Newcastle and Cambridge, are now taking on the challenge to be one of the first groups in Europe to develop these transformative devices. Once established, we have the ability to push the boundaries of what has been achieved in this fledgling field to date. Guy's project will be involved in the full development of these devices. Working with the in-house materials development team, he will characterise and benchmark the thick epitaxy produced. He will learn to use the cleanroom by implementing the established in-house MOSFET and PiN diode recipes on the wafers coming from the SiC epitaxial reactor. He will then modify these so they are appropriate for implementation on novel IGBT substrates, using FEM simulation to design and layout new masksets. Like any PhD, it is expected that while Guy will be involved with the full research and development process, he will be free to follow the more interesting results a that arise on the way, be that a novel design, processing step, a design split, or the physics behind the device characteristics.