Application of Wide-Bang Gap power semiconductors in wind energy power converters

在接下来的10年里，SiC技术可能会成熟到一个水平，即功率模块成本对于风力涡轮机等大功率应用变得可行。这些器件的可用性将使转换器设计具有更大的灵活性，并有可能实现更快的开关速度、更低的传导损耗和更高的连接电压。这些成就并非没有技术挑战。如果要利用1000- 2000 A范围内的电流提高开关速度，则必须解决高dv/dt、电压过冲和EMI问题。这样的电流将需要MOSFET管芯/模块的大规模并联，这将对电路布局、栅极驱动和模块设计带来挑战。高dv/dt开关会导致寄生振荡，从而引发影响内部系统和外部EMC合规性的EMI问题。同样的开关瞬变将出现在转换器端子和模块隔离栅上，这将对绝缘材料施加额外的应力。

Over the next 10 years it is possible that SiC technology will have mature to a level that power module costs become viable for bulk power applications such as wind turbines. The availability of these devices will allow greater flexibility in converter designs with the possibility of topologies that exploit faster switching speeds, lower conduction loss and increased connection voltage. These gains are not without technical challenges. Issues with high dv/dt, voltage overshoot and EMI will have to be addressed if increased switching speeds are to be exploited with currents in the range 1000-2000A. Such currents will require mass paralleling of MOSFET die/modules, which will be challenging for circuit layout, gate drives and module design. High dv/dt switching leads to parasitic oscillations will give rise to EMI issues affecting both internal systems and external EMC compliance. This same switching transient will be appearing at converter terminals and across module isolation barriers where it will impose additional stress on insulation materials.