Deterministic nanoscale transfer printing of compound semiconductor nanowires for large scale device integration.

基于化合物半导体纳米线的器件在光电子学方面具有巨大的潜力，允许光源和探测器的小型化和暴露表面的功能化。应用范围从作为激光器和嵌入到片上波导中的光电探测器的光子集成电路到气体和生物传感器。这类器件在制造方面面临着巨大的挑战，纳米线的定位要么需要单独的纳米线进行缓慢的连续处理，要么需要在选择性区域生长方面面临重大的生长挑战。该项目旨在解决这些困难，并实现大规模、商业上可行的纳米线的大规模并行集成。确定性转移印刷技术将被开发，以允许化合物半导体纳米线在单个到晶片规模的平行工艺中精确地定位和定向到异质衬底上。这些转移印刷技术将允许使用低成本、高密度的自组装纳米线晶片作为施主衬底，并控制任何可重新配置的纳米线的定位。实现纳米线有序和精确定位转移印刷的关键是发展纳米结构转移印刷印章和转移印刷过程中的搅拌技术。将采用广泛的加工技术，包括直接写入激光光刻以图案转移印刷邮票模具。开发的技术将用于印刷GaN和其他材料纳米线和纳米棒，包括自上而下的制造和分子束外延生长。

Compound semiconductor nanowire based devices have significant potential in optoelectronics allowing for miniaturization of optical sources and detectors and functionalization of exposed surfaces. Applications range from photonic integrated circuits as lasers and photodetectors embedded into waveguides on chip to gas and biological sensors. Such devices face significant challenges in terms of fabrication with the positioning of nanowires either requiring slow serial processing of individual nanowires or significant growth challenges in selective area growth. This project seeks to address these difficulties and enable large scale parallel integration of nanowires at large and commercially viable scales. Deterministic transfer printing techniques will be developed to allow the precise positioning and orientation of compound semiconductor nanowires onto foreign substrates in an individual to wafer scale parallel process. These transfer printing techniques will allow the use of low cost, high-density self-assembled nanowire wafers as donor substrates and control of positioning of nanowires in any reconfigurable configuration. Key to achieving transfer printing of nanowire ordering and precision positioning is the development of nanostructured transfer printing stamps and agitation techniques during the transfer printing process. A wide range of processing techniques will be employed including direct write laser lithography to pattern transfer printing stamp moulds. The techniques developed will be used to print GaN and other material nanowires and nanorods by both top down fabrication and MBE growth.