'Investigating the impact of Bismuth on the band gap engineering and morphological properties of III/V semiconductor materials grown using MBE'.

本计画旨在研究在InP基底上以分子束外延成长的四元三/五族半导体材料InGaAsBi与InAlAsBi，铋化物的掺入对材料的影响。生长的材料将使用光致发光光谱，XRD，Nomarski显微镜和外部承包技术，如西姆斯和TEM进行分析。铋含量和各种生长参数对材料的带隙，光学活性和形态质量的影响将被确定。这些材料的增长只是最近才被报道，这些材料的进一步发展将导致在未来的雪崩光电二极管（APD）设备的实施。

This project aims to investigate the impact of Bismuth incorporation in the quaternary III/V semiconductor materials of InGaAsBi and InAlAsBi grown via MBE on a InP substrate. Materials grown will be analyzed using photo-luminescent spectroscopy, XRD, Nomarski microscopy and externally contracted techniques such as SIMS and TEM. The effects of bismuth content and various growth parameters on the materials band gap, optical activity and morphological quality will be determined. The growth of these materials has only recently been reported and further development of these materials will lead to implementation in future Avalanche Photodiode (APD) devices.