Near-Infrared Organic Semiconductor Materials for Optoelectronic Technologies

目前有机半导体技术的成功主要是由有机发光二极管（OLED）的发展所推动的，有机发光二极管现在已被常规应用于显示技术中。然而，在过去的十年中，有机光伏（OPV）在设备效率和稳定性方面取得了令人印象深刻的进步，已经逐渐从实验室的好奇心转向利基市场。他们最近的成功与有机半导体材料的快速发展相吻合，电子供体和电子受体的吸收覆盖了光谱的UV-Vis-NIR部分通过采用不同化学构建块的战略设计，这些新材料在电磁波谱的近红外区域具有高吸收率和可调谐的能量。这使得近红外有机光电探测器（OPD）的发展成为可能，这是一种用于生物成像的新型光声探针，最近又使得具有独特光电和磁性能的开壳特征的quinoidal共轭聚合物的发展成为可能这个协同项目将建立在UCL Schroeder小组在低带隙有机半导体合成方面的专业知识和ICL Gasparini小组在高效率近红外光电器件制造和表征方面的专业知识的基础上。该项目将专注于设计和合成下一代吸收近红外的有机半导体，其吸收波段延伸至近红外（~ 1600 nm），并将其初步纳入用于近红外光探测的OPD器件中。该项目的目标是(i)开发和合成新型近红外吸收有机半导体，以及（ii）在近红外区域和低暗电流（Jd）下通过光探测获得OPD。有机半导体的化学设计具有相对狭窄和特定的吸收光谱，将允许探索选择性窄带近红外光检测的opd，其中生物医学应用和过程监测的有效材料选择仍然很少。

The current success of organic semiconductor technology is mainly driven by the development of organic light-emitting diodes (OLED), which are now routinely employed in display technologies. In the last decade, however, organic photovoltaics (OPV), leveraging the impressive improvement in device efficiency and stability, have gradually moved from a lab curiosity to a niche market. Their recent success has coincided with the rapid development of organic semiconductor materials, both electron donors and electron acceptors, with absorption covering the UV-Vis-NIR part of the light spectrum.1 Through strategic design adopting different chemical building blocks, these new materials afforded high absorption with tuneable energetics into the NIR region of the electromagnetic spectrum. This allowed the development of NIR organic photodetector (OPD), novel photoacoustic probes for bioimaging applications, and more recently enabled the development of quinoidal conjugated polymers with open-shell character with distinctive opto-electronic and magnetic properties.2,3 This synergistic project will build on the expertise of the Schroeder group at UCL in the synthesis of low bandgap organic semiconductors and the know-how of the Gasparini group at ICL in the fabrication and characterisation of high efficiency NIR OPD devices. The project will focus on the design and synthesis of the next generation of NIR absorbing organic semiconductors with an absorption band extending deep into the NIR (~ 1600 nm) and their initial incorporation into OPD devices for NIR photodetection. The aim of this project is (i) to develop and synthesise novel NIR absorbing organic semiconductors and (ii) to obtain OPD with photodetection in the NIR region and low dark current (Jd). The chemical design of organic semiconductors with relatively narrow and specific absorption spectra will allow OPDs to be explored for selective narrowband NIR photodetection, where effective-material choices for biomedical applications and process monitoring remain scarce.