Development of new main group resists for electron beam lithography and direct writing of nanostructures

本研究项目将集中于制备主族化合物和包含13、14、15和16族元素的络合物。然后将这些络合物浇铸成薄膜，并利用电子束光刻(EBL)和极紫外光刻(EUV)进行图形制作。在使用这些簇的抗蚀剂中加入重族元素14和15有望显著提高它们的写入速度，从而提高它们的性能。这项工作是在合成主基化学和电子器件的纳米制造的界面上进行的。我们还相信，这可能是一种直接写入纳米结构的方法，比目前的技术更可持续。成功的申请者将接受关于溶液相配位化学和合成固态技术原理的出色培训，特别是应用于空气敏感材料。在材料方面，培训纳米制造技术，包括EBL。还将提供有关表征工具的培训，如X射线结晶学、核磁共振光谱学和质谱学。

This research project will be focused on the preparation of main group compounds and complexes containing elements from both group 13, 14, 15 and 16. These complexes will then be cast into thin films and investigated in pattern fabrication using electron-beam lithography (EBL) and extreme ultraviolet (EUV) lithography. Incorporation of heavy group 14 and 15 elements into resists using these clusters is expected to drastically increase their write speed and thus their performance. This work lies at the interface of synthetic main group chemistry and the nanofabrication of electronic devices. We also believe this could be a route to direct writing of nanostructures in a way that is more sustainable that present technologies.The successful applicant will receive excellent training in the principles of solution phase coordination chemistry and synthetic solid-state techniques, specifically as applied to air-sensitive materials. On the materials side training in techniques for nanofabrication, including EBL. Training in characterisation tools such as X-ray crystallography, NMR spectroscopy and mass spectrometry will also be provided.