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硅表面二维Mott绝缘体超导性质研究

批准号:
12204225
项目类别:
青年科学基金项目(C类)
资助金额:
30.0 万元
负责人:
吴雪峰
依托单位:
学科分类:
表面界面与低维物理
结题年份:
2025
批准年份:
2022
项目状态:
已结题
项目参与者:
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项目摘要

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中文摘要
未掺杂的铜酸盐是Mott绝缘态,通过引入空穴或电子掺杂实现超导转变,然而由于结构和性质的复杂性,至今对铜酸盐高温超导体的超导机制尚未有达成广泛共识。一个结构简单性质类似的体系将有助于推动高温超导机制研究的发展。第IV主族元素在硅表面形成的√3X√3结构是理想的结构简单能带单一的二维Mott绝缘体,近期我们利用调制掺杂的方法发现了空穴掺杂的Sn√3X√3超导性质,然而目前对该体系的超导性质认识还不全面。本项目拟利用扫描隧道显微术(STM)研究掺杂和电子强关联在该体系超导转变中的作用,将有助于我们更好的理解非常规超导机制。另外,电子强关联的六角晶格本认为是探寻手性超导的理想平台,由于时间反演对称性破缺手性超导具有重要的基础研究价值(如马约拉纳费米子)和未来应用潜力,相比于其他潜在的手性超导体该体系具有更强的超导态,因此超导配对对称性研究也是本项目的重要内容。
英文摘要
Undoped cuprates are Mott insulating, which realize superconducting transition by introducing holes or electron doping. However, due to the complexity of structure and electronic properties, there still is no consensus regarding the precise mechanism of cuprate superconductivity. A system with simple structure and similar properties will help to promote the development of the mechanism of high temperature superconductivity. The √ 3x √ 3 structure formed by group IV elements on the silicon surface is an ideal two-dimensional Mott insulator with simple structure and single energy band surface state. Recently, we found the superconducting properties of hole doped Sn √ 3x √ 3 by using the method of modulation doping. However, the understanding of the superconducting properties of this system is not comprehensive at present. This project intends to use scanning tunneling microscopy (STM) to study the role of doping and electron strong correlation in the superconducting transition of the system, which will help us better understand the mechanism of unconventional superconductivity. In addition, the hexagonal lattice with strong electron correlation is considered to be an ideal platform to pursue chiral superconductors. Due to the breaking of time inversion symmetry, chiral superconductors have important basic research value (e.g. Majorana Physics) and future application potential. Compared with other potential chiral superconductors, this system has stronger superconducting states. Therefore, the study of superconducting pairing symmetry in this system is also content of this project.
本项目围绕硅衬底上二维强关联超导体系,系统研究了Sn-√3×√3结构的超导配对对称性、调制掺杂,并以Pb-√3×√3为对比体系探讨了电子关联强度的作用。首先,利用扫描隧道显微镜与高分辨准粒子干涉技术,在Sn-√3×√3中观测到超导缺陷态波函数具有独特的“节点-反节点”实空间干涉图案。结合理论模拟确凿证实了该体系具有手性d+id波超导配对对称性,为鉴定本征拓扑超导体提供了微观判据。其次,针对传统衬底掺杂法的局限,发展了“外延薄膜缓冲层”方法,成功实现了Sn-√3×√3从空穴过掺杂至电子掺杂的宽范围、低缺陷连续调控,便于后续研究掺杂和超导关系。再者,发现重掺杂衬底能抑制Pb-√3×√3的低温结构相变,使其稳定于母相并呈现更小的Mott能隙,从而建立了与Sn体系晶格相同但关联强度可调的理想对比平台。此外,辅助研究深化了对半导体表面功函数及砷二维合金结构的理解。本研究不仅阐明了一个具体二维超导体系的新奇物性,其发展的微观探测方法与精密调控技术也对凝聚态物理前沿研究具有普遍意义。项目成果水平学术论文形式呈现,目前已发表2篇学术论文,包括一篇第一作者Physical Review X。
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