过渡金属与碲表面的相互作用及其化合物新奇物性调控

过渡金属二硫族化合物（TMDC）显现出丰富的奇异电子态和相关的新奇量子现象，引起科学界广泛的研究兴趣。逐一甄别并调节TMDC低维结构中d电子引入的关联效应以及与较重硫族元素相关的自旋-轨道耦合对理解其新奇物理性质的起源至关重要。本项目以Te及过渡金属碲化物为突破口，提出先制备Te单晶超薄膜、再在其表面沉积过渡金属原子并控制覆盖度直至形成碲化物单晶相薄膜的全新研究思路：通过控制生长Te超薄膜调节其结构、手性与边缘态等，并利用电荷、晶格掺杂实现对其物性的调控；再在表面沉积过渡金属，特别是磁性原子，并控制其晶格占位、间距、空间分布等，分别解析电子关联效应与自旋-轨道耦合及其协同作用；进而获得过渡金属碲化物二维薄膜及其异质结构，阐明对其进行性能调控的有效方法及其微观物理机制。本研究将加深对TMDC二维材料的认识，为其在电子器件、光电转换、化学传感等方面的研究和应用提供新的机遇。

Transition metal dichalcogenides (TMDC) attract extensive research interests due to their exotic electronic states and the related quantum phenomena. Towards the understanding of the origin of the novel properties emerging in the low-dimensional TMDC structures, it is important to distinguish the two effects inside: the electron correlation introduced by d electrons and the spin-orbital coupling introduced by the heavy chalcogen element. The current project focuses on Te and transition metal tellurides by introducing a new synthesis approach: the ultra-thin single crystalline Te films will be grown first; then transition metal atoms will be deposited and crystalline telluride films formed by controlling the deposition dosage. By adjusting the growth conditions, the lattice structure, chirality and edge states are tuned. And the physical properties are controlled by electron/lattice doping. The deposition of transition metal atoms is adjusted to control the adsorption sites, interspacing and spatial distribution, enabling the analyses of the effects of electron correlation and spin-orbital coupling as well as their cooperation. Transition metal telluride films and heterointerfaces are further obtained for the study of the property tuning and the microscopic mechanism. The current project will deepen the understandings of TMDC, providing new opportunities for their applications in electronic devices, photoelectric conversion, chemical sensing etc.