复杂材料异质界面电荷转移诱导的新奇量子态研究

基于传统半导体界面能带工程的微电子工业将人类社会带入了信息时代。而对复杂功能材料而言，界面能带弯曲即电荷转移将诱导体系表现出更为丰富的行为。本项目拟研究对复杂材料界面电荷转移的设计与控制方法，利用离子晶体极性不连续的界面获得二维电子体系，以及制备高质量的介电层并通过栅压在大范围精确调节界面体系的电荷密度，从而实现铁电、超导等物理性质及其人工调控；通过电子自旋、轨道等多种自由度之间的耦合作用在异质界面构筑自旋极化、轨道有序、反常磁性与拓扑量子态等，实现量子反常霍尔效应等新奇量子现象；还将探讨微观晶格对电子态的影响作用及其动力学机制。本项目将充分发挥申请团队在表面物理方面积累的基础优势，从对复杂材料低维结构制备的精确控制入手，通过微观尺度的高分辨率综合表征，发现新的低维量子体系与新奇量子效应，并提出人工调控的方法与原理，直接推动新概念电子器件设计的发展。

The modern microelectronics based on the interface band engineering of conventional semiconductors has led the human society into the information era. For complex functional materials, such interface charge transfer associated with the band bending is expected to induce more interesting behaviors. We propose to study the control of charge transfer at interfaces of complex materials, including the polar discontinuous interface between ionic crystals, and the gate structures with highly dielectric insulating layers. We aim to tune the charge density of the interface electron systems in a broad range precisely, thus realize the control of their physical properties. We will also construct spin polarized, orbit ordered, anomalous magnetic, or topological states at heterointerfaces by manipulating the interactions between different electron degrees of freedom. Novel quantum phenomena will be explored and the microscopic picture of the lattice influence will be described from the dynamic point of view. The plan is to take the advantage of our knowledge on fundamental surface physics, laying the basis on the precise control of growth of low-dimensional complex materials. We will also develop and apply high resolution characterization techniques to discover and investigate quantum effects. The control mechanism will be proposed to bring new concept to the development of next-generation electronics.