质子入射引起3D SRAM器件单粒子效应机理研究

随着半导体技术的持续发展以及宇航事业的强烈需求驱动，3D堆叠结构器件将会越来越广泛的应用于航天航空等领域，其抗辐射可靠性问题无疑将会成为该类器件的在轨应用瓶颈之一。目前国内外对于重离子引起的3D堆叠结构器件单粒子效应（SEE）已有较为系统的研究，而对于质子引起的SEE机理和规律研究还很缺乏。质子是空间辐射环境的主要成分，对于集成度高的纳米器件SEE非常明显，另外其能量分布广、射程长等特性也导致机理更为复杂。本项目拟选用商用纳米级3D堆叠结构器件，通过反向分析手段获得器件物理参数，使用Geant4工具研究质子入射3D堆叠结构器件的能量沉积、电荷收集及共享等机制。同时，利用多个质子加速器获取束流针对3D堆叠结构器件开展SEE实验。掌握3D SRAM器件的SEE地面实验技术方法，获得不同能量质子入射3D SRAM器件引起SEE的客观规律以及作用机制，为我国3D堆叠结构器件的航天应用积累基础数据。

3D integration is an emerging technology that is expected to lead an industry paradigm shift due to its tremendous benefits. With the continuous development of semiconductor technology and the strong demands of the aerospace, 3D stacked devices will be more and more widely used in aerospace and other fields. For the application of 3D stacked devices under the environment of space radiation, the problem of radiation effects induced by proton will undoubtedly become the application bottleneck. At present, there have been many studies on the single event effect (SEE) of 3D stacked devices induced by heavy ions, but there are few studies on the SEE of 3D stacked devices caused by protons. Proton is the main component of the space radiation environment, and the highly integrated nano-device is very sensitive to the proton-induced SEE. In addition, the protons in the space radiation environment are wide energy distribution and long range in Si, which also lead to a more complicated mechanism of the SEE in 3D devices. In this project, the proton induced single event upset (SEU) will be studied for the state-of-the-art commercial 3D SRAM device. The internal mechanism will be studied by means of GEANT4 simulation tool and the ground accelerator experimental test. The experimental skills of SEU induced by proton of 3D stacked devices will be explored for the ground accelerator test. The objective law and mechanism of SEU caused by proton will also be studied. This project will provide theoretical guidance and technical support for aerospace applications of 3D stacked devices in China.