基于金属-宽禁带半导体-铁电材料复合结构的新型自驱动紫外探测器的制备和性能研究

基于ZnO材料的肖特基结型自驱动紫外探测器在紫外告警、保密通讯、空间探测、环境监测等国防和民用领域有着广阔的应用前景，其核心工作机制在于利用肖特基势垒形成的内建电场来实现光生电子-空穴对的分离与收集，进而实现自驱动紫外探测。但是，受限于有限的内建电场强度，单纯依靠上述工作机制的ZnO自驱动紫外探测器的性能已经越来越难以满足实用化的需求。针对该问题，本项目提出将铁电材料及其自发极化效应引入到宽禁带半导体肖特基结自驱动紫外探测器中增强内建电场，进而提高器件的光电响应特性的新思想，实验上构建Au/ZnO/BaTiO3/Al结构新型自驱动探测器件，综合利用Au/ZnO界面的肖特基势垒效应、ZnO/BaTiO3的异质结效应和BaTiO3的铁电自发极化效应提高自驱动紫外探测器的性能，为实现高性能自驱动紫外探测器件提供新策略。

Schottky junction self-powered UV detectors based on ZnO materials have broad application prospects in defense and civilian fields, such as ultraviolet warning, confidential communication, space detection, and environmental monitoring. The core working mechanism is to use the built-in electric field formed by the Schottky barrier to realize the separation and collection of photo-generated electron-hole pairs, and then achieve self-powered ultraviolet detection. However, due to the limited built-in electric field strength, the performance of ZnO self-powered UV detectors that rely solely on the above-mentioned working mechanism has become increasingly difficult to meet the practical needs. In response to this problem, this project proposes a new idea to introduce ferroelectric materials and their spontaneous polarization effects into a wide-bandgap semiconductor Schottky junction self-powered ultraviolet detector to enhance the built-in electric field, thereby improving the photoelectric response characteristics of the device. A new self-powered detector device with Au/ZnO/BaTiO3/Al structure was experimentally constructed, which combined the Schottky barrier effect of the Au/ZnO interface, the heterojunction effect of ZnO/BaTiO3, and the ferroelectric spontaneous polarization effect of BaTiO3. The performance of driving UV detectors provides a new strategy for achieving high-performance self-powered UV photodetectors.