INTERPRETATION OF THE LUMINESCENCE QUENCHING IN CHEMICALLY ETCHED POROUS SILICON BY THE DESORPTION OF SIH3 SPECIES
INTERPRETATION OF THE LUMINESCENCE QUENCHING IN CHEMICALLY ETCHED POROUS SILICON BY THE DESORPTION OF SIH3 SPECIES
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通过 SIH3 物质的解吸来解释化学蚀刻多孔硅中的发光淬灭
DOI：
10.1063/1.113082
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发表时间：
1994
影响因子：
4
通讯作者：
P. Donato
中科院分区：
文献类型：
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作者：
N. Zoubir;M. Vergnat;T. Delatour;A. Burneau;P. Donato
通过光致发光、红外光谱和热脱附光谱实验研究了热退火对化学刻蚀多孔硅的影响。结果表明，SiH3和SiF3的释放是多孔硅光致发光退化的第一步。这些实体在氢分子之前解吸。
The effect of thermal annealing on chemically etched porous silicon was studied by combined photoluminescence, infrared spectrometry, and thermal‐desorption spectrometry experiments. The results show that the release of SiH3 and SiF3 entities is a first step in the photoluminescence degradation in porous silicon. These entities desorb before molecular hydrogen.
DOI：
10.1116/1.575980
发表时间：
1989-05-01
期刊：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
影响因子：
--
作者：
CHABAL, YJ;HIGASHI, GS;BURROWS, VA
通讯作者：
BURROWS, VA