Thermal Effect on the Gate-Drain Bias Stress for Amorphous InGaZnO Thin Film Transistors
Thermal Effect on the Gate-Drain Bias Stress for Amorphous InGaZnO Thin Film Transistors
复制标题
热效应对非晶InGaZnO薄膜晶体管栅漏偏应力的影响
DOI：
10.1149/2.019205esl
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发表时间：
2012
影响因子：
--
通讯作者：
Fu
中科院分区：
文献类型：
--
作者：
Sheng;T. Chang;Min;Shih;T. Chen;Fu
本研究探讨氧吸附/脱附对InGaZnO薄膜电晶体在汲极或闸极-汲极应力下电性的影响。在施加漏极应力后，器件的电学特性出现了不稳定的现象，包括电流-电压的电流拥挤效应和电容-电压的展宽效应。这是由于在漏极区域附近的InGaZnO表面上吸附的氧引起的。但是，对于栅漏应力，器件表现出稳定的电学行为，这可能是由于自加热效应和通过热能解吸氧的结果。
This study investigates oxygen adsorption/desorption to influence on the electrical properties of InGaZnO thin film transistors during drain or gate-drain stresses. After a drain stress, instable electrical characteristics of device are observed, including a current crowding effect of current-voltage and a stretch-out of capacitance-voltage. These are caused by the oxygen adsorbed on the InGaZnO surface near the drain region. However, for the gate-drain stress, the device exhibits a stable electrical behavior, which could be results from the self-heating effects and desorbed the oxygen by heat energy.
影响因子：
1.5
作者：
Fujii, Mami;Yano, Hiroshi;Kwon, Jang Yeon
通讯作者：
Kwon, Jang Yeon