Controlled large non-reciprocal charge transport in an intrinsic magnetic topological insulator MnBi(2)Te(4).
Controlled large non-reciprocal charge transport in an intrinsic magnetic topological insulator MnBi(2)Te(4).
复制标题
DOI:
10.1038/s41467-022-33705-y
复制
发表时间:
2022-10-19
影响因子:
16.6
通讯作者:
中科院分区:
文献类型:
--
作者:
Symmetries, quantum geometries and electronic correlations are among the most important ingredients of condensed matters, and lead to nontrivial phenomena in experiments, for example, non-reciprocal charge transport. Of particular interest is whether the non-reciprocal transport can be manipulated. Here, we report the controllable large non-reciprocal charge transport in the intrinsic magnetic topological insulator MnBi2Te4. The current direction relevant resistance is observed at chiral edges, which is magnetically switchable, edge position sensitive and stacking sequence controllable. Applying gate voltage can also effectively manipulate the non-reciprocal response. The observation and manipulation of non-reciprocal charge transport reveals the fundamental role of chirality in charge transport of MnBi2Te4, and pave ways to develop van der Waals spintronic devices by chirality engineering. Non-reciprocal charge transport refers to the different resistance between positive and negative current, and is fundamental in a variety of applications, for instance, current rectification. Some materials exhibit intrinsic nonreciprocal transport, but manipulation of this can be challenging. Here, the authors demonstrate large non-reciprocal transport which can be switched magnetically, is stacking dependent, and can be tuned via an applied gate voltage.
登录
查看更多内容
影响因子:
16.6
作者:
Qin F;Shi W;Ideue T;Yoshida M;Zak A;Tenne R;Kikitsu T;Inoue D;Hashizume D;Iwasa Y
通讯作者:
Iwasa Y
影响因子:
16.6
作者:
Li Y;Leveau A;Zhao Q;Feng Q;Lu H;Miao J;Xue Z;Martin AC;Wegel E;Wang J;Orme A;Rey MD;Karafiátová M;Vrána J;Steuernagel B;Joynson R;Owen C;Reed J;Louveau T;Stephenson MJ;Zhang L;Huang X;Huang T;Fan D;Zhou C;Tian Q;Li W;Lu Y;Chen J;Zhao Y;Lu Y;Zhu C;Liu Z;Polturak G;Casson R;Hill L;Moore G;Melton R;Hall N;Wulff BBH;Doležel J;Langdon T;Han B;Osbourn A
通讯作者:
Osbourn A
影响因子:
13.6
作者:
Wakatsuki R;Saito Y;Hoshino S;Itahashi YM;Ideue T;Ezawa M;Iwasa Y;Nagaosa N
通讯作者:
Nagaosa N
影响因子:
16.6
作者:
Tokura Y;Nagaosa N
通讯作者:
Nagaosa N
影响因子:
8.6
作者:
He, Pan;Walker, S. McKeown;Yang, Hyunsoo
通讯作者:
Yang, Hyunsoo