Determination of in situ trap properties in charge coupled devices using a single-trap “pumping” technique

Determination of in situ trap properties in charge coupled devices using a single-trap “pumping” technique
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使用单陷阱“泵浦”技术确定电荷耦合器件中的原位陷阱特性

DOI:
10.1109/radecs.2013.6937447
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发表时间:
2013
期刊:
2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
影响因子:
--
通讯作者:
D. Burt
D. Burt
中科院分区:
--
文献类型:
--
作者:
D. Hall;N. Murray;A. Holland;J. Gow;A. Clarke;D. Burt

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从哈勃太空望远镜到盖亚和欧几里得的科学任务都需要超精确的位置信息。然而,在空间望远镜的辐射环境中,高能质子对CCD焦平面探测器的损伤会导致陷阱的产生,导致电荷传递效率的降低,从而导致定位精度的下降。了解CCD在运行过程中产生的陷阱及其特性对于优化设备和适当的建模至关重要,通过图像的后处理来纠正损坏的影响。“泵送”单个陷阱的技术使得单个陷阱的研究达到了一个新的细节和精度水平,这是其他技术(如深能级瞬态光谱)无法实现的,同时还可以将每个陷阱定位到设备的亚像素级别。概述了所使用的原理,我们展示了a中心技术,这是串行读出中最具影响力的陷阱,给出了与更一般的理论值一致的结果,但这里展示了新的结果,表明了实现的发射时间的扩散以及单个陷阱捕获概率随信号电平增加的变化。该技术现在可以应用于CCD中的其他时间和温度状态,以表征单个陷阱,定位到亚像素精度,从而可以对优化过程和建模技术进行显着改进。
The science goals of missions from the Hubble Space Telescope through to Gaia and Euclid require ultra-precise positional information. However, in the radiation environment of the space telescopes, damage to the CCD focal plane detectors through high energy protons leads to the creation of traps, a loss of charge transfer efficiency and a consequent deterioration in the positional accuracy. An understanding of the traps produced and their properties in the CCD during operation is essential to allow optimisation of the devices and suitable modelling to correct the effect of the damage through the post-processing of images. The technique of “pumping” single traps has allowed the study of individual traps to a new level of detail and accuracy that cannot be achieved with other techniques, such as Deep Level Transient Spectroscopy, whilst also locating each trap to the sub-pixel level in the device. Outlining the principles used, we have demonstrated the technique for the A-centre, the most influential trap in serial read-out, giving results consistent with the more general theoretical values, but here showing new results indicating the spread in the emission times achieved and the variation in capture probability of individual traps with increasing signal levels. This technique can now be applied to other time and temperature regimes in the CCD to characterise individual traps, localised to sub-pixel accuracy, such that dramatic improvements can be made to optimisation processes and modelling techniques.
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