Modelling charge transfer in a radiation damaged charge coupled device for Euclid
Modelling charge transfer in a radiation damaged charge coupled device for Euclid
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欧几里得辐射损伤电荷耦合器件中的电荷转移建模
DOI：
10.1117/12.925394
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Hall D
中科院分区：
文献类型：
--
作者：
Hall D
当电子通过辐射损坏的电荷耦合器件（CCD）转移时，它们可能会遇到硅中的陷阱，在那里它们将被捕获并随后释放。这种电子的捕获和释放会导致图像的“模糊”。捕获过程的动力学可以通过使用肖克利-里德-霍尔理论来描述，该理论使用指数时间常数来确定捕获和释放的概率。如果受到恶劣的辐射环境，例如在空间中，主要带电粒子是质子，这些入射的质子会导致CCD内部的位移损伤，并导致稳定阱位的形成。随着陷阱密度的增加，信号电子的捕获和释放会对电荷转移效率（CTE）产生重大影响，从而损害器件的性能。随着任务的科学目标变得越来越苛刻，例如欧几里得和盖亚任务，必须克服辐射损害的问题。为了更深入地了解捕获过程及其对器件性能的影响，开发了蒙特卡罗模拟方法来模拟辐射损坏CCD中的电荷转移。本研究探讨了开发这种模型时遇到的各种困难：适当的时钟机制的结合，使用合适的陷阱参数及其简并性，以及通过使用三维Silvaco模拟来模拟像素内电荷存储几何形状的方法的发展。
As electrons are transferred through a radiation damaged Charge Coupled Device (CCD), they may encounter traps in the silicon in which they will be captured and subsequently released. This capture and release of electrons can lead to a 'smearing' of the image. The dynamics of the trapping process can be described through the use of Shockley-Read-Hall theory, in which exponential time constants are used to determine the probability of capture and release. If subjected to a hostile radiation environment, such as in space where the dominant charged particle is the proton, these incident protons can cause displacement damage within the CCD and lead to the formation of stable trap sites. As the trap density increases, the trapping and release of signal electrons can have a major impact on the Charge Transfer Efficiency (CTE) to the detriment of device performance. As the science goals for missions become ever more demanding, such as those for the ESA Euclid and Gaia missions, the problem of radiation damage must be overcome. In order to gain a deeper understanding of the trapping process and the impact on device performance, a Monte Carlo simulation has been developed to model the transfer of charge in a radiation damaged CCD. This study investigates the various difficulties encountered when developing such a model: the incorporation of appropriate clocking mechanisms, the use of suitable trap parameters and their degeneracy, and the development of methods to model the charge storage geometry within a pixel through the use of three-dimensional Silvaco simulations.
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优化器件时钟方案以最大限度地减少电荷耦合器件辐射损伤的影响
影响因子：
3.1
作者：
D. Hall;J. Gow;Neil J. Murray;A. Holland
通讯作者：
A. Holland
通过“泵浦”陷阱缓解全帧 CCD 应用中辐射引起的电荷转移效率低下
影响因子：
3.1
作者：
N. Murray;A. Holland;J. Gow;David J. Hall;J. Tutt;D. Burt;J. Endicott
通讯作者：
J. Endicott
质子辐照 EEV CCD 中体陷阱的影响
DOI：
--
发表时间：
1993
期刊：
影响因子：
--
作者：
A. Holland
通讯作者：
A. Holland
对 Euclid CCD 结构中的电荷存储进行建模
影响因子：
1.3
作者：
Clarke A
通讯作者：
Clarke A