Enhanced Heat Transport Capability across Boron Nitride/Copper Interface through Inelastic Phonon Scattering
Enhanced Heat Transport Capability across Boron Nitride/Copper Interface through Inelastic Phonon Scattering
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通过非弹性声子散射增强氮化硼/铜界面的热传输能力
DOI：
10.1002/adfm.202206545
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发表时间：
2022-07
影响因子：
19
通讯作者：
Tongxiang Fan
中科院分区：
文献类型：
--
作者：
Jingjing Wang;Ziyang Wang;Kunming Yang;Naiqi Chen;Jiamiao Ni;Jian Song;Quan Li;Fangyuan Sun;Yue Liu;Tongxiang Fan
Interfacial thermal resistance plays a critical role in heat dissipation, when the mean free paths of heat energy carriers approach or exceed the characteristic lengths of devices. Deep understanding on electron and phonon scattering, as well as their coupling behaviors are of importance for interfacial heat transport enhancement. In this work, complicated influential mechanisms of interface defects on phonon scattering are studied, from the aspects of both time‐domain thermoreflectance (TDTR) measurements and atomistic simulations. Particularly, this study focuses on the comprehensive influence of inelastic phonon scattering on interfacial thermal conductance (hK) of hexagonal and amorphous boron nitride (BN)/copper (Cu) interfaces with nonreactive and nondiffusive features. The TDTR results imply that the hK of Al/a‐BN/Cu is ≈80% higher than that of Al/h‐BN/Cu counterpart, with the comparable film thicknesses, grain sizes, and interface roughness. Although lower local strain near h‐BN/Cu interface can boost electron–phonon coupling, inelastic phonon scattering at a‐BN/Cu interface may greatly promote the interfacial heat transport. The authors believe multiple phonons scattering accompanied by high‐frequency phonons transformation to low‐frequency phonons within a‐BN may provide more phonon–phonon coupling channels at the a‐BN/Cu interface. The present findings may provide more insights to understand nanoscale heat transport mechanisms at metal/nonmetal interfaces.
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DOI：
10.1016/j.compositesa.2020.105921
发表时间：
2020-08
期刊：
Composites Part A: Applied Science and Manufacturing
影响因子：
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影响因子：
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I. Taşkin;O. Sen;Melis Emanet;M. Çulha;B. Yılmaz
DOI：
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发表时间：
2020-08
影响因子：
5.2
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通讯作者：
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通讯作者：
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