On the origin of the controversial electrostatic field effect in superconductors.
On the origin of the controversial electrostatic field effect in superconductors.
复制标题
关于超导体中备受争议的静电场效应的起源。
DOI:
10.1038/s41467-021-22998-0
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发表时间:
2021-05-12
影响因子:
16.6
通讯作者:
Tsepelin V
中科院分区:
文献类型:
--
作者:
Golokolenov I;Guthrie A;Kafanov S;Pashkin YA;Tsepelin V
Superconducting quantum devices offer numerous applications, from electrical metrology and magnetic sensing to energy-efficient high-end computing and advanced quantum information processing. The key elements of quantum circuits are (single and double) Josephson junctions controllable either by electric current or magnetic field. The voltage control, commonly used in semiconductor-based devices via the electrostatic field effect, would be far more versatile and practical. Hence, the field effect recently reported in superconducting devices may revolutionise the whole field of superconductor electronics provided it is confirmed. Here we show that the suppression of the critical current attributed to the field effect, can be explained by quasiparticle excitations in the constriction of superconducting devices. Our results demonstrate that a miniscule leakage current between the gate and the constriction of devices perfectly follows the Fowler-Nordheim model of electron field emission from a metal electrode and injects quasiparticles with energies sufficient to weaken or even suppress superconductivity. A recent report on electrostatic field effect in superconducting devices provides a high potential for advanced quantum technology, but it remains controversial. Here, the authors report that the suppression of critical current, which was attributed to the field effect, can instead be explained by quasiparticle excitations in the constriction of superconducting devices.
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影响因子:
38.3
作者:
Alegria, Loren D.;Bottcher, Charlotte G. L.;Yacoby, Amir
通讯作者:
Yacoby, Amir
DOI:
10.1109/tdei.2013.6571470
发表时间:
2013-08-01
影响因子:
3.1
作者:
Lyon, David;Hubler, Alfred
通讯作者:
Hubler, Alfred
影响因子:
4
作者:
Morpurgo, AF;Klapwijk, TM;van Wees, BJ
通讯作者:
van Wees, BJ
影响因子:
4.6
作者:
Paolucci, Federico;De Simoni, Giorgio;Giazotto, Francesco
通讯作者:
Giazotto, Francesco
影响因子:
38.3
作者:
De Simoni, Giorgio;Paolucci, Federico;Giazotto, Francesco
通讯作者:
Giazotto, Francesco