Development of Scanning Tunneling Potentiometry for Semiconducting Samples
Development of Scanning Tunneling Potentiometry for Semiconducting Samples
复制标题
半导体样品扫描隧道电位测定法的开发
DOI：
10.1143/jjap.51.125202
复制
发表时间：
2012
影响因子：
1.5
通讯作者：
Y. Hasegawa
中科院分区：
文献类型：
--
作者：
M. Hamada;Y. Hasegawa
我们已经开发了一种新的设置扫描隧道电位法（STP）适用于半导体样品，这不能通过传统的STP研究，因为它测量的局部静电势从电压，使隧道电流为零。在新的STP设置中，通过测量使隧穿电流固定在非零值的施加电压来获得尖端下方的局部电势及其空间分布。使用金薄膜样本，我们展示了新STP设置的性能，并发现可以在非零隧道电流模式下测量局部电势，能量灵敏度为20 µeV，空间分辨率为纳米级。
We have developed a new setup of scanning tunneling potentiometry (STP) applicable to semiconducting samples, which cannot be studied by conventional STP since it measures the local electrostatic potential from a voltage that makes the tunneling current zero. In the new STP setup, the local potential below the tip and its spatial distribution are obtained by measuring the applied voltage that makes the tunneling current fixed at a nonzero value. Using a gold thin film sample we demonstrated the performance of the new STP setup and found that the local potential can be measured in the nonzero tunneling current mode with an energy sensitivity of ∼20 µeV and nanometer-scale spatial resolution.
影响因子：
8.6
作者：
Ono, M;Nishigata, Y;Hasegawa, Y
通讯作者：
Hasegawa, Y
影响因子：
8.6
作者：
Eguchi, T;Fujikawa, Y;Hasegawa, Y
通讯作者：
Hasegawa, Y