Effects of microstructures on the ablation behaviors of ZrC deposited by CVD
Effects of microstructures on the ablation behaviors of ZrC deposited by CVD
复制标题
微观结构对CVD沉积ZrC烧蚀行为的影响
DOI：
10.1016/j.surfcoat.2013.12.074
复制
发表时间：
2014-02
影响因子：
5.4
通讯作者：
Yongjie Wang
中科院分区：
文献类型：
--
作者：
Kezhi Li;Hejun LI;Yulei Zhang;Yongjie Wang
通过改变H2+ Ar稀释气体中h2浓度，采用ZrCl4-C3H6-Ar体系低压化学气相沉积（LPCVD）技术在碳/碳（C/C）复合材料上制备了不同微观结构的ZrC涂层。研究了显微组织对氧化乙炔炬下ZrC涂层抗烧蚀性能的影响。结果表明：随着h2o2浓度的增加，ZrC涂层的择优取向由（111）转变为（200）和（220），粒径由微尺度减小到纳米尺度；烧蚀100 s后，（200）择优取向的原位纳米颗粒涂层的烧蚀速率最低，线性烧蚀速率为0.25 × 10−3mm/s，质量烧蚀速率为0.88 × 10−4g/cm2/s。涂层具有良好的抗烧蚀性能主要是由于在烧蚀过程中形成了致密且无裂纹的zro2纳米棒层。
Through changing the H2concentrations in the H2+ Ar dilution gas, different microstructures of ZrC coatings were prepared on carbon/carbon (C/C) composites by low pressure chemical vapor deposition (LPCVD) using ZrCl4–C3H6–Ar system. The effects of microstructure on anti-ablation behaviors of the ZrC coating under oxyacetylene torch were investigated. Results show that the preferred orientation of ZrC coatings transforms from (111) to (200) to (220) and the particle size decrease from micro-scales to nano-scales as the H2concentrations increase. After ablation for 100 s, the coating with in-situ nanoparticles characterized by the (200) preferred orientation exhibits the lowest ablation rates among four samples, which the linear and mass ablation rates were 0.25 × 10− 3mm/s and 0.88 × 10− 4g/cm2/s, respectively. The good ablation resistance of the coating is mainly attributed to the formation of the dense and crack-free ZrO2layer with ZrO2nanorods during the ablation.
登录
查看更多内容
DOI：
10.4028/www.scientific.net/amr.651.289
发表时间：
2013-01
期刊：
Advanced Materials Research
影响因子：
--
作者：
A. Pramanik;G. Littlefair
通讯作者：
A. Pramanik;G. Littlefair
影响因子：
10.9
作者：
Jacobson, NS;Curry, DM
通讯作者：
Curry, DM
DOI：
10.1007/bf01117784
发表时间：
1976-06
期刊：
Soviet Powder Metallurgy and Metal Ceramics
影响因子：
--
作者：
V. Funke;A. I. Tyutyunnikov;V. Makeev;A. N. Pilyugin;V. Shevchenko
通讯作者：
V. Funke;A. I. Tyutyunnikov;V. Makeev;A. N. Pilyugin;V. Shevchenko
影响因子：
5.4
作者：
F. Toma;L. Berger;T. Naumann;S. Langner
通讯作者：
F. Toma;L. Berger;T. Naumann;S. Langner
无金属催化剂的氧乙炔炬烧蚀二氧化硅纳米线的生长机制
影响因子：
3
作者：
Li, Zhaoqian;Li, Hejun;Li, Kezhi;Zhang, Shouyang
通讯作者：
Zhang, Shouyang