Growth mechanism of silica nanowires without a metal catalyst via oxyacetylene torch ablation

Growth mechanism of silica nanowires without a metal catalyst via oxyacetylene torch ablation
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无金属催化剂的氧乙炔炬烧蚀二氧化硅纳米线的生长机制

DOI:
10.1016/j.matlet.2012.01.056
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发表时间:
2012-05
期刊:
影响因子:
3
通讯作者:
Zhang, Shouyang
Zhang, Shouyang
中科院分区:
材料科学3区
文献类型:
--
作者:
Li, Zhaoqian;Li, Hejun;Li, Kezhi;Zhang, Shouyang

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本文首次在无金属催化剂的情况下,通过在氧乙炔炬下烧蚀含碳化硅涂层制备了二氧化硅纳米线(SiONW)。用改进的气-液-固(VLS)和氧化物辅助生长(OAG)模型讨论了二氧化硅纳米线的生长机理。二氧化硅纳米颗粒作为生长催化剂,为纳米线的形成提供了硅和氧原子,也是生长的场所。在中心区域,在冷却过程中形成了直径均匀的150 nm、长度超过100μm的二氧化硅纳米线。在外部区域,在烧蚀过程中合成了二氧化硅纳米线,最终生长成花椰菜状的二氧化硅层。
In this paper, for the first time, silica nanowires (SiONWs) were synthesized without a metal catalyst via ablation of SiC-containing coating under oxyacetylene torch. The growth mechanism of silica nanowires was discussed by using a developed vapor–liquid–solid (VLS) and oxide-assisted growth (OAG) model. Silica nanoparticles as a growth catalyst provided silicon and oxygen atoms for the formation of the nanowires and served as a growth site as well. In the center region, silica nanowires with an even diameter of 150nm and a length up to more than 100μm formed during the cooling process. In the outer region, silica nanowires were synthesized during the ablation process and finally grew into a cauliflower-like silica layer.
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