Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC
Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC
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4H-SiC 中螺纹位错的双光子激发三维光致发光成像和位错线分析
DOI：
10.1063/1.5043238
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发表时间：
2018
影响因子：
3.2
通讯作者：
H. Tsuchida
中科院分区：
文献类型：
--
作者：
R. Tanuma;I. Kamata;J. P. Hadorn;H. Tsuchida
利用双光子激发光致发光（2 PPL）技术对4 H-SiC外延层中的刃型位错（TEDs）、纯c型螺型位错（TSDs）和c + a型混合型位错（TMD）进行了三维成像，研究了不同切角下外延层中位错的倾角。基于载流子扩散的数值模型解释了暗衬度2 PPL成像由带边发射提供的机制。对4 H-SiC外延层中的450多个穿透位错进行了三维可视化，并根据额外半平面的方向和手性几何（右旋或左旋螺旋）将其分为6类TED、2类TSD和12类TMD。2 PPL图像显示，所有的螺纹位错类型都倾向于台阶流动方向，其程度是更突出的较大的切角。TED也向它们的额外半平面的方向倾斜。TSD垂直于阶跃流动方向的倾角受手征性的影响，而TMD垂直于阶跃流动方向的倾角受额外半平面方向和手征性的影响。考虑位错与生长面上的前进台阶之间的动力学相互作用，讨论了位错倾角的来源，描述了螺刃位错（TEDs）、纯c螺位错（TSDs）和c + a穿透混合位错（TMD）在4 H-SiC外延层中的双光子激发光致发光（2 PPL），研究了不同切角外延层中位错的倾角。基于载流子扩散的数值模型解释了暗衬度2 PPL成像由带边发射提供的机制。对4 H-SiC外延层中的450多个穿透位错进行了三维可视化，并根据额外半平面的方向和手性几何（右旋或左旋螺旋）将其分为6类TED、2类TSD和12类TMD。2 PPL图像显示，所有的螺纹位错类型都倾向于台阶流动方向，其程度是更突出的较大的切角。TED也倾向于他们额外的h的方向。
This paper describes the three-dimensional imaging of threading edge dislocations ( TEDs), pure c threading screw dislocations ( TSDs), and c + a threading mixed dislocations ( TMDs) in 4H silicon carbide (4H-SiC) epilayers by two-photon-excited photoluminescence (2PPL), where inclinations of dislocations in epilayers with different offcut angles are investigated. A numerical model based on carrier diffusion explains the mechanism of the dark-contrast 2PPL imaging provided by band edge emission. More than 450 threading dislocations in 4H-SiC epilayers are visualized three-dimensionally and are classified into six -type TEDs, two -type TSDs, and twelve -type TMDs according to the directions of extra half-planes and the chiral geometries (right- or left-handed screw). The 2PPL images reveal that all threading dislocation types incline in the step-flow direction, the extent of which is more prominent for a larger offcut angle. The TEDs also incline in the directions of their extra half-planes. The inclinations of TSDs perpendicular to the step-flow direction are influenced by chirality, while those of TMDs are influenced by both the directions of the extra half-planes and the chirality. The origins of the dislocation inclinations are discussed taking into account the kinetic interactions between the dislocations and the advancing steps on the growing surface.This paper describes the three-dimensional imaging of threading edge dislocations ( TEDs), pure c threading screw dislocations ( TSDs), and c + a threading mixed dislocations ( TMDs) in 4H silicon carbide (4H-SiC) epilayers by two-photon-excited photoluminescence (2PPL), where inclinations of dislocations in epilayers with different offcut angles are investigated. A numerical model based on carrier diffusion explains the mechanism of the dark-contrast 2PPL imaging provided by band edge emission. More than 450 threading dislocations in 4H-SiC epilayers are visualized three-dimensionally and are classified into six -type TEDs, two -type TSDs, and twelve -type TMDs according to the directions of extra half-planes and the chiral geometries (right- or left-handed screw). The 2PPL images reveal that all threading dislocation types incline in the step-flow direction, the extent of which is more prominent for a larger offcut angle. The TEDs also incline in the directions of their extra h...
影响因子：
3.2
作者：
Feng, Gan;Suda, Jun;Kimoto, Tsunenobu
通讯作者：
Kimoto, Tsunenobu