A sleeve and bulk method for fabrication of photonic structures with features on multiple length scales
A sleeve and bulk method for fabrication of photonic structures with features on multiple length scales
复制标题
一种用于制造具有多个长度尺度特征的光子结构的套筒和体方法
DOI：
10.1088/1361-6528/ac9391
复制
发表时间：
2022
期刊：
影响因子：
3.5
通讯作者：
Doty, M F
中科院分区：
文献类型：
--
作者：
Carfagno, H S;McCabe, L N;Zide, J M;Doty, M F
传统的光子结构（例如光子晶体）利用（a）具有相同尺寸和间距的小型特征的大型阵列，以及（b）少量较大的特征（例如衍射输出耦合器）。在传统的纳米加工中，单独的光刻和蚀刻步骤用于小型和大型特征，以便采用工艺参数，为每个特征尺寸类别提供最佳的图案转移和侧壁轮廓，从而克服与反应离子蚀刻滞后相关的挑战。这种方法无法扩展到更复杂的光子结构，例如逆向设计协议中出现的光子结构。这些结构包括具有大范围尺寸的特征，因此无法区分小和大。我们开发了一种套筒和批量蚀刻协议，可用于同时对各种尺寸的特征进行图案化，同时保留所需的图案转移保真度和侧壁轮廓。这种方法减少了开发稳健工艺流程所需的时间，简化了具有更广泛特征尺寸的器件的制造，并且能够制造结构日益复杂的器件。
Traditional photonic structures such as photonic crystals utilize (a) large arrays of small features with the same size and pitch and (b) a small number of larger features such as diffraction outcouplers. In conventional nanofabrication, separate lithography and etch steps are used for small and large features in order to employ process parameters that lead to optimal pattern transfer and side-wall profiles for each feature-size category, thereby overcoming challenges associated with reactive ion etching lag. This approach cannot be scaled to more complex photonic structures such as those emerging from inverse design protocols. Those structures include features with a large range of sizes such that no distinction between small and large can be made. We develop a sleeve and bulk etch protocol that can be employed to simultaneously pattern features over a wide range of sizes while preserving the desired pattern transfer fidelity and sidewall profiles. This approach reduces the time required to develop a robust process flow, simplifies the fabrication of devices with wider ranges of feature sizes, and enables the fabrication of devices with increasingly complex structure.
用于量子光子学的 4H-SiC-on-Insulator 平台
DOI：
10.1364/cleo_si.2019.sm2f.6
发表时间：
2019
期刊：
2019 Conference on Lasers and Electro-Optics (CLEO)
影响因子：
--
作者：
D. Lukin;C. Dory;M. Radulaski;Shuo Sun;Sattwik Deb Mishra;M. Guidry;D. Vercruysse;J. Vučković
通讯作者：
J. Vučković
影响因子：
6.3
作者：
Oskooi, Ardavan F.;Roundy, David;Johnson, Steven G.
通讯作者：
Johnson, Steven G.