Observation of spin-orbit magnetoresistance in metallic thin films on magnetic insulators.

Observation of spin-orbit magnetoresistance in metallic thin films on magnetic insulators.
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磁绝缘体上金属薄膜自旋轨道磁阻的观测

DOI:
10.1126/sciadv.aao3318
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发表时间:
2018-01
期刊:
影响因子:
13.6
通讯作者:
Wu D
Wu D
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Zhou L;Song H;Liu K;Luan Z;Wang P;Sun L;Jiang S;Xiang H;Chen Y;Du J;Ding H;Xia K;Xiao J;Wu D

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在Cu/YIG中观察到了一种新型的自旋-轨道磁电阻效应。在由正常金属和铁磁绝缘体组成的双层膜中,由Rashba自旋-轨道相互作用引起的磁电阻(MR)效应被预测,但尚未观察到。在Cu[Pt]/Y3 Fe 5 O 12(YIG)双层结构中,Cu/YIG界面被纳米尺度的Pt岛修饰,我们对这种新型的自旋轨道磁共振(SOMR)效应进行了实验观察.这种新的MR显然不是由体自旋-轨道相互作用引起的,因为Cu中的自旋-轨道相互作用可以忽略,Pt岛的不连续性。当Pt岛不存在或远离Cu/YIG界面时,这种SOMR消失;因此,我们可以明确地将其归因于Pt装饰增强的界面处的Rashba自旋轨道相互作用。数值模拟结果与SOMR实验结果在磁场角度依赖性和Cu厚度依赖性方面是一致的。我们的研究结果表明,实现自旋操纵的接口工程。
A new type of spin-orbit magnetoresistance effect is observed in Cu/YIG with interface decorated with nanosize Pt islands. A magnetoresistance (MR) effect induced by the Rashba spin-orbit interaction was predicted, but not yet observed, in bilayers consisting of normal metal and ferromagnetic insulator. We present an experimental observation of this new type of spin-orbit MR (SOMR) effect in the Cu[Pt]/Y3Fe5O12 (YIG) bilayer structure, where the Cu/YIG interface is decorated with nanosize Pt islands. This new MR is apparently not caused by the bulk spin-orbit interaction because of the negligible spin-orbit interaction in Cu and the discontinuity of the Pt islands. This SOMR disappears when the Pt islands are absent or located away from the Cu/YIG interface; therefore, we can unambiguously ascribe it to the Rashba spin-orbit interaction at the interface enhanced by the Pt decoration. The numerical Boltzmann simulations are consistent with the experimental SOMR results in the angular dependence of magnetic field and the Cu thickness dependence. Our finding demonstrates the realization of the spin manipulation by interface engineering.
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发表时间: 1999-08-30
影响因子: 8.6
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