Graphene/ZnO nanocomposite with seamless interface renders photoluminescence quenching and photocatalytic activity enhancement
Graphene/ZnO nanocomposite with seamless interface renders photoluminescence quenching and photocatalytic activity enhancement
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DOI：
10.1007/s10853-018-2605-9
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发表时间：
2018-06
影响因子：
4.5
通讯作者：
Shao X
中科院分区：
文献类型：
--
作者：
Liu Huihui;Xiang Miaomiao;Shao Xiang;Shao Xiang;Shao Xiang;Shao X;Shao X;Shao X
石墨烯（G）和氧化物的界面可以显着影响二元系统的性能和/或应用。然而，在传统的物理混合和/或溶剂热制备过程中，它通常是无法控制的。在本文中，我们利用C2H2作为碳源，通过中温化学气相沉积方法在ZnO纳米晶上直接生长纳米晶石墨烯薄膜，成功地获得了具有均匀且无污染的G/氧化物界面的G/ZnO二元结构。制备的G/ZnO粉末不仅表现出石墨烯和ZnO之间明显的电荷转移，导致光致发光猝灭，而且当石墨烯厚度优化时，亚甲基蓝的光催化降解活性增强。这项工作证明了界面控制对于石墨烯/半导体二元系统功能的重要意义。
The interface of graphene (G) and oxide can significantly influence the properties and/or applications of the binary system. However, it is usually beyond controllability during the conventional physical intermixing and/or solvothermal preparations. In this article, by directly growing nanocrystalline graphene films on the ZnO nanocrystals through a medium-temperature chemical vapor deposition method utilizing C2H2as the carbon source, we successfully achieved a G/ZnO binary structure with a uniform and contamination-free G/oxide interface. The fabricated G/ZnO powders not only demonstrated a clear charge transfer between graphene and ZnO that leads to photoluminescence quenching, but also manifested an enhanced activity in the photocatalytic degradation of methylene blue when the graphene thickness is optimized. This work has demonstrated the essential significance of the interface control for the functionality of the graphene/semiconductor binary systems.
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影响因子：
2.5
作者：
M. Thein;S. Pung;A. Aziz;M. Itoh
通讯作者：
M. Thein;S. Pung;A. Aziz;M. Itoh
影响因子：
3.7
作者：
M. Allen;C. Swartz;T. Myers;T. Veal;C. McConville;S. M. Durbin
通讯作者：
M. Allen;C. Swartz;T. Myers;T. Veal;C. McConville;S. M. Durbin
影响因子：
3.7
作者：
Ramesha, Ganganahalli K.;Sampath, Srinivasan
通讯作者：
Sampath, Srinivasan
影响因子：
3
作者：
A. R. Marlinda;N. Huang;M. Muhamad;M. N. An'amt;B. Chang;N. Yusoff;I. Harrison;H. Lim;C. Chia;S. V. Kumar
通讯作者：
A. R. Marlinda;N. Huang;M. Muhamad;M. N. An'amt;B. Chang;N. Yusoff;I. Harrison;H. Lim;C. Chia;S. V. Kumar
DOI：
10.1039/c3cp55038a
发表时间：
2014-02
期刊：
Physical chemistry chemical physics : PCCP
影响因子：
--
作者：
Xiaoyang Pan;Min‐Quan Yang;Yi‐Jun Xu
通讯作者：
Xiaoyang Pan;Min‐Quan Yang;Yi‐Jun Xu