Characterization of L21 order in Co2FeSi thin films on GaAs
Characterization of L21 order in Co2FeSi thin films on GaAs
复制标题
GaAs 上 Co2FeSi 薄膜中 L21 阶的表征
DOI：
10.1088/1742-6596/471/1/012022
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
I. Zizak
中科院分区：
文献类型：
--
作者：
B. Jenichen;T. Hentschel;J. Herfort;X. Kong;A. Trampert;I. Zizak
Co2FeSi/GaAs(110) 和 Co2FeSi/GaAs(-1-1-1)B 杂化结构通过分子束外延 (MBE) 生长，并通过透射电子显微镜 (TEM) 和 X 射线衍射 (XRD) 进行表征。该薄膜包含不均匀分布的有序 L21 和 B2 相。平均化学计量可通过 XRD 确定，用于 MBE 源的校准。扩散过程导致不均匀性，影响长程有序。通过掠入射 XRD 测得平均 L21 有序度高达 65%。使用具有超晶格反射的暗场 TEM 对 Co2FeSi 中长程有序空间分布的横向不均匀性进行成像，并显示其与 Co/Fe 比率的变化相对应。
Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The films contain inhomogeneous distributions of ordered L21 and B2 phases. The average stoichiometry could be determined by XRD for calibration of the MBE sources. Diffusion processes lead to inhomogeneities, influencing long-range order. An average L21 ordering of up to 65% was measured by grazing-incidence XRD. Lateral inhomogeneities of the spatial distribution of long-range order in Co2FeSi were imaged using dark-field TEM with superlattice reflections and shown to correspond to variations of the Co/Fe ratio.
影响因子：
3.2
作者：
Y. Takamura;R. Nakane;S. Sugahara
通讯作者：
Y. Takamura;R. Nakane;S. Sugahara