Improving Convergence and Simulation Time of Quantum Hydrodynamic Simulation: Application to Extraction of Best 10-nm FinFET Parameter Values
Improving Convergence and Simulation Time of Quantum Hydrodynamic Simulation: Application to Extraction of Best 10-nm FinFET Parameter Values
复制标题
改善量子流体动力学仿真的收敛性和仿真时间：应用于提取最佳 10 nm FinFET 参数值
DOI：
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发表时间：
2017
影响因子：
2.8
通讯作者：
N. Jha
中科院分区：
文献类型：
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作者：
Xiaoliang Dai;N. Jha
随着电子设备进入深纳米领域，准确而高效的设备模拟对于解释新兴的量子效应变得必要。传统的漂移扩散和流体动力 (HD) 装置模拟模型在这种情况下并不准确。使用量子 HD (QHD) 模拟模型非常重要。然而，该模型存在收敛性差和 CPU 时间长的问题。为了克服这些障碍，在本文中，我们提出了一种新方法，用 HD 模拟代替部分 QHD 模拟，该方法表现出较差的收敛行为和较高的 CPU 时间。为了实现这一点，我们从经典 HD 模型中捕获器件状态，然后将结果作为 QHD 模拟的初始猜测，然后通过 Newton-Raphson 方法求解。这带来了显着的改进。不收敛率和仿真时间分别减少了86.0%和30.2%。作为所提出方法的应用，我们从庞大的器件设计空间中提取了 10 nm 技术节点的体型 FinFET 和绝缘体上硅 FinFET 的最佳参数值。
As electronic devices enter the deep nanometer regime, accurate and efficient device simulations become necessary to account for the emerging quantum effects. The traditional drift-diffusion and hydrodynamic (HD) device simulation models are not accurate in this regime. It is important to use the quantum HD (QHD) simulation model. However, this model suffers from poor convergence and high CPU times. To overcome these obstacles, in this paper, we propose a novel method to replace part of the QHD simulation that exhibits poor convergence behavior and high CPU time with HD simulation. In order to implement this, we capture the device states from the classical HD model and then apply the results as the initial guess to the QHD simulation, which is then solved by the Newton-Raphson method. This leads to significant improvements. The nonconvergence rate and the simulation time are reduced by 86.0% and 30.2%, respectively. As an application of the proposed methodology, we extract the best parameter values of both bulk and silicon-on-insulator FinFETs at the 10-nm technology node from their vast device design space.
器件几何形状对 10.7 nm SOI-FinFET 电气特性的影响
DOI：
10.1109/iwce.2014.6865877
发表时间：
2014
期刊：
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影响因子：
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作者：
Abdikarimov A
通讯作者：
Abdikarimov A