Multiwavelength, sub-nanosecond Yb:YAG/Cr4+:YAG/YVO4 passively Q-switched Raman microchip laser
Multiwavelength, sub-nanosecond Yb:YAG/Cr4+:YAG/YVO4 passively Q-switched Raman microchip laser
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多波长、亚纳秒 Yb:YAG/Cr4 :YAG/YVO4 被动调Q拉曼微芯片激光器
DOI:
10.1109/jstqe.2018.2792845
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发表时间:
2018-01
影响因子:
4.9
通讯作者:
Dong Jun
中科院分区:
文献类型:
--
作者:
Wang Xiao-Lei;Wang Xiao-Jie;Dong Jun
We have demonstrated a multiwavelength, sub-nanosecond Yb:YAG/Cr4+:YAG/YVO4 passively Q-switched Raman microchip laser (PQSRML) emitting at 1-1.26 μm. Multiple wavelength Stokes laser radiations at 1123, 1134, 1260 nm and 1079, 1134, 1157, 1260 nm have been obtained at different pump power levels, respectively. The second-order Stokes laser at 1.26 μm increases rapidly with the pump power and becomes the dominant component in the laser emitting spectrum. The maximum average output power of 135.4 mW is achieved at the absorbed pump power of 2.64 W, meanwhile, the pulse duration is 440 ps, and the peak power is 9.2 kW for the Raman laser. The repetition rate of 20.3 kHz has been achieved. The multi-wavelength, sub-nanosecond lasers at 1-1.26 μm with adjustable frequency separation depending on pump power have potential applications in terahertz wave generation, photodynamic therapy, and generating red laser.
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