Adsorption and Removal Reactions of (CH3)2S on Rh/Al2O3/NiAl(100): Structural and Spectroscopic Study
Adsorption and Removal Reactions of (CH3)2S on Rh/Al2O3/NiAl(100): Structural and Spectroscopic Study
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(CH3)2S 在 Rh/Al2O3/NiAl(100) 上的吸附和去除反应：结构和光谱研究
DOI：
10.1380/ejssnt.2009.239
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发表时间：
2009
影响因子：
0.7
通讯作者：
M. Taniguchi
中科院分区：
文献类型：
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作者：
T. Nomoto;S. Yagi;K. Soda;H. Namatame;M. Taniguchi
利用X射线光电子能谱（XPS）和原子力显微镜（AFM）研究了Rh/Al_2O_3/NiAl（100）催化剂对（CH_3）_2S的吸附反应和热处理对脱硫反应的影响。结果表明，沉积态Rh/Al 2 O3/NiAl（100）与1000 K热处理后的Rh/Al 2 O3/NiAl（100）在NiAl上的吸附反应存在差异。（CH 3）2S在Rh/Al 2 O3/NiAl（100）沉积态表面300 K时发生解离反应，而O2诱导的脱硫反应在523 K时发生。相反，热处理表面对（CH 3）2S的解离反应是相当惰性的，因为Rh原子通过高温处理（1000 K）通过Al 2 O3层溶解到NiAl（100）衬底中。原子力显微镜的结果也显示了这些体系的形貌变化，如Al 2 O3/NiAl（100）的许多条纹结构，Rh/Al 2 O3/NiAl（100）沉积态表面的纳米团簇结构，以及Rh/Al 2 O3/NiAl（100）在1000 K加热时的纳米孔结构。[DOI：10.1380/ejssnt.2009.239]
We have studied the adsorption reaction of (CH3)2S on Rh/Al2O3/NiAl(100) and sulfur removal reaction depending upon heat-treatment using X-ray Photoelectron Spectroscopy and Atomic Force Microscopy techniques. The results show a difference in the adsorption reaction between the as-deposited Rh/Al2O3/NiAl(100) and that heat-treated at 1000 K. (CH3)2S dissociates on the Rh/Al2O3/NiAl(100) as-deposited surface at 300 K, and the sulfur removal reaction occurs at 523 K induced by O2 dosing. In contrast, the heat-treated surface is quite inert against the dissociative reaction of (CH3)2S, because the Rh atoms dissolute into the NiAl(100) substrate through the Al2O3 layer by the high temperature treatment (1000 K). The AFM results also show the morphological changes in these systems, such as many stripe structures for the Al2O3/NiAl(100), nanoclustered surface for the Rh/Al2O3/NiAl(100) as-deposited surface, and nano-hole structures for the Rh/Al2O3/NiAl(100) heated at 1000 K. [DOI: 10.1380/ejssnt.2009.239]
AFM、XPS 和 NEXAFS 溅射退火 Rh(100) 表面上 (CH_3)_2S 的吸附行为
DOI：
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发表时间：
2006
期刊：
e-Journal of Surface Science and Nanotechnology (EJSSNT) 4
影响因子：
--
作者：
T.Nomoto;S.Yagi et al.
通讯作者：
S.Yagi et al.