Structural, dielectric, and piezoelectric properties of Ce-doped Bi7Ti4.2Ta0.3W0.5O21 intergrowth ferroelectric ceramics
Structural, dielectric, and piezoelectric properties of Ce-doped Bi7Ti4.2Ta0.3W0.5O21 intergrowth ferroelectric ceramics
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Ce掺杂Bi7Ti4.2Ta0.3W0.5O21共生铁电陶瓷的结构、介电和压电性能
DOI：
10.1016/j.ceramint.2022.02.195
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发表时间：
2022-03
期刊：
影响因子：
--
通讯作者：
Xin Nie
中科院分区：
文献类型：
--
作者：
Renfen Zeng;Fan Ye;Xiangping Jiang;Chao Chen;Xiaokun Huang;Xin Nie
The Bi 7- x Ce x Ti 4.2 Ta 0.3 W 0.5 O 21 (BTTW-BITT- x Ce, x = 0.05, 0.10, 0.15, 0.20) ceramics were studied as potential materials for high-temperature applications. The microstructure, dielectric, piezoelectric and ferroelectric properties of Ce doped BTTW-BITT samples were analyzed in detail. The results indicated that an appropriate amount of Ce ion doping could inhibit the growth of grains, suppress the relaxation peak, reduce high-temperature dielectric losses, and greatly improve the piezoelectric activities. The optimal ceramics was obtained at x = 0.15, which possessed a maximum piezoelectric constant of d 33 = 23.4 pC/N, a high Curie temperature of 713 °C, a loss value of 6% at 500 °C, and a favorable thermal stability of d 33 = 21.1 pC/N (90% of the initial value) at 500 °C. This result indicates that BTTW-BITT-0.15Ce has great potential for applications in the high temperature fields. In addition, XPS results showed that there were two Ce valences states, Ce 3+ and Ce 4+ present in the BTTW-BITT- x Ce ceramics.
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影响因子：
1.7
作者：
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影响因子：
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作者：
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