Ge-on-Si waveguide device for self-referenced fingerprint region absorption spectroscopy
Ge-on-Si waveguide device for self-referenced fingerprint region absorption spectroscopy
复制标题
用于自参考指纹区域吸收光谱的硅基硅波导装置
DOI：
10.1117/12.2650469
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Nedeljkovic M
中科院分区：
文献类型：
--
作者：
Nedeljkovic M
我们提出了基于Ge-on-Si波导的器件的发展，用于水溶液的低噪声中红外吸收光谱，目标波长在6和10 μm之间，能够降低相对强度噪声，这是测量被大背景基质吸收掩盖的微小分析物吸收时的关键障碍。该传感器使用一对集成的热光开关在参考波导和传感器波导之间连续切换光，从而即使当光源和光电检测器未集成在同一芯片上时，也可以消除常见的噪声分量。
We present the development of Ge-on-Si waveguide-based devices for low-noise mid-infrared absorption spectroscopy of aqueous solutions, targeting wavelengths between 6 and 10 μm, that are able to reduce the relative intensity noise which is a key roadblock when measuring tiny analyte absorptions masked by a large background matrix absorption. The sensor uses a pair of integrated thermo-optic switches to continuously switch light between a reference waveguide and a sensor waveguide, so that common noise components can be cancelled out, even when the light source and photodetector are not integrated on the same chip.
影响因子：
3.8
作者：
Malik, Aditya;Dwivedi, Sarvagya;Roelkens, Gunther
通讯作者：
Roelkens, Gunther