Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions
Research into the electrical property variation of undoped CdTe and ZnTe crystals grown under Te-rich conditions
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富Te条件下生长的未掺杂CdTe和ZnTe晶体电学性能变化研究
DOI：
10.1016/j.jallcom.2014.05.167
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发表时间：
2014-11
影响因子：
6.2
通讯作者：
Wanqi Jie
中科院分区：
文献类型：
--
作者：
Hang Liu;Yihui He;Rui Yang;Wanqi Jie
未掺杂的ZnTe和CdTe体单晶生长Te饱和的条件下，从溶液和熔体，分别。为了深入了解的电性能的变化，在两个碲化物的缺陷结构进行了讨论。根据实际的生长速度和整个冷却历史，碲杂质（Tei）和锌空位（VZn）被认为是主要的生长缺陷，解释了p型ZnTe的低电阻率。然而，相对较高的提拉速率和缓慢的冷却过程导致碲反位（TeCd）作为主要的生长缺陷，导致轻n型CdTe的高电阻率。进一步获得了两种碲化物的低温（8.6 K）光致发光光谱。施主-受主对（DAP）和自由电子与中性受主的复合（eA）是发光的主要成分，但它们的强度是反相关的。在未掺杂的富Te ZnTe中，eA比DAP好上级，表明Teior VZn的浓度高。相反，DAP是未掺杂的富Te CdTe的主要发射。此外，在未掺杂的富Te ZnTe中还观察到明显的V线，这可能与VZn-ZnNi紧密的Frenkel对有关。
Both undoped ZnTe and CdTe bulk single crystals are grown under Te-saturated conditions from the solution and melt, respectively. To give an insight into the variation of the electrical properties, the defects structures in both tellurides are discussed. According to the actual growth velocities and the entire cooling history, tellurium interstitials (Tei) and Zinc vacancies (VZn) are proposed as the dominant grown-in defects, account for the low resistivity of p-type ZnTe. However, relatively high pulling rates and slow cooling-down processes result in tellurium anti-sites (TeCd) as the principle grown-in defects, leading to the high resistivity of light n-type CdTe. Further low-temperature (8.6 K) photoluminescence spectra of both tellurides are obtained. The donor–acceptor pair (DAP) and recombination of free electron to neutral acceptor (eA) dominate the luminescence, however, with their intensities are anti-correlated. eA is superior to DAP in undoped Te-rich ZnTe, suggests a high concentration of Teior VZn. On the contrary, DAP is the principal emission for undoped Te-rich CdTe. In addition, V-line is clearly identified in undoped Te-rich ZnTe, which possibly associated with VZnor close Frenkel pair VZn–Zni.
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影响因子：
3.3
作者：
S. V. Plyatsko;T. L. Petrenko;F. Sizov
通讯作者：
S. V. Plyatsko;T. L. Petrenko;F. Sizov
DOI：
10.1103/physrevb.39.3192
发表时间：
1989-02
期刊：
Physical review. B, Condensed matter
影响因子：
--
作者：
Jansen;Sankey
通讯作者：
Jansen;Sankey
影响因子：
4
作者：
J. Chang;M. Cho;H. M. Wang;H. Wenisch;T. Hanada;T. Yao;K. Sato;O. Oda
通讯作者：
J. Chang;M. Cho;H. M. Wang;H. Wenisch;T. Hanada;T. Yao;K. Sato;O. Oda
影响因子：
1.8
作者：
R. Triboulet;K. P. Van;G. Didier
通讯作者：
R. Triboulet;K. P. Van;G. Didier
影响因子：
1.8
作者：
V. Babentsov;R. James
通讯作者：
V. Babentsov;R. James