Tailoring the composite interface at lower temperature by the nanoscale interfacial active layer formed in cold sprayed cBN/NiCrAl nanocomposite

Tailoring the composite interface at lower temperature by the nanoscale interfacial active layer formed in cold sprayed cBN/NiCrAl nanocomposite
复制标题

通过冷喷涂cBN/NiCrAl纳米复合材料中形成的纳米级界面活性层在较低温度下定制复合材料界面

DOI:
10.1016/j.matdes.2017.11.062
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发表时间:
2018-02
期刊:
影响因子:
8.4
通讯作者:
Chang-Jiu Li
Chang-Jiu Li
中科院分区:
材料科学1区
文献类型:
--
作者:
Xiao-Tao Luo;Chang-Jiu Li

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在复合材料中,通常首选强界面键合,以获得增强的热、电子传递和负载传递能力。为了在立方氮化硼(C - bn)基复合材料中诱导化学界面键合,由于C - bn的高化学惰性,在常规烧结中需要超高温(1200-2000℃)和压力(7-12 GPa)。在本研究中,立方BN/NiCrAl复合材料在超音速冲击固结过程中,在增强/基体界面区形成了含有高浓度晶格无序、位错和晶界等晶体缺陷的纳米厚活性层。活性层的加入大大增强了界面反应的动力学和热力学,在825℃的低温退火条件下形成了C - bn /Cr2N/AlB2/NiCrAl界面结构。由于活性层厚度的限制,界面反应产物被限制在几十纳米的宽度内,避免了过度的界面反应引起的力学性能下降。界面结合的增强导致导热系数从15.4 W m−1K−1大幅提高到36.5 W m−1K−1。
Strong interfacial bonding is usually preferred in composite materials to obtain enhanced heat, electron transport and load transfer abilities. To induce chemical interfacial bonding in cubic Boron Nitride (c-BN) based composites, ultra-high temperatures (1200–2000 °C) and pressures (7–12 GPa) are required in conventional sintering due to the high chemical inertness of c-BN. In this work, a nanometer thick active layer containing a high concentration of crystal defects including lattice disorder, dislocations, and grain boundaries is formed at the reinforcement/matrix interface region in cubic BN/NiCrAl composite during supersonic impact consolidation. Kinetics and thermodynamics of the interfacial reaction are greatly enhanced by the active layer, so that a c-BN/Cr2N/AlB2/NiCrAl interfacial structure was formed at a low annealing temperature of 825 °C. Due to the limited thickness of the active layer, the interfacial reacting products were confined to tens of nanometers width and excessive interfacial reaction induced mechanical property deterioration is avoided. The enhanced interfacial bonding leads to a substantial improvement in thermal conductivity, from 15.4 to 36.5 W m− 1K− 1.
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