Arrays of quasi-hexagonally ordered silica nanopillars with independently controlled areal density, diameter and height gradients
Arrays of quasi-hexagonally ordered silica nanopillars with independently controlled areal density, diameter and height gradients
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具有独立控制面积密度、直径和高度梯度的准六方有序二氧化硅纳米柱阵列
DOI：
10.1088/0957-4484/26/11/115301
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发表时间：
2015
期刊：
影响因子：
3.5
通讯作者：
Ziemann P
中科院分区：
文献类型：
--
作者：
Özdemir B;Huang W;Plettl A;Ziemann P
提出了一种在光滑 SiO 2-Si 晶圆上有序纳米柱阵列中独立定制地形参数距离、直径和高度梯度的连续制造方法。为此，进一步开发和组合了先前报道的制备技术。首先，通过计算机控制的拉出速度浸涂和随后的氢等离子体处理，自组装金盐负载胶束，产生准六方有序的二维金纳米颗粒（NP）阵列，其颗粒间距离沿拉力方向单向变化在 50-120 nm 之间。其次，以这种方式接收的距离（或面密度）梯度分布与应用选择性光化学生长技术的纳米粒子的直径控制梯度分布叠加。为了进行演示，使用 1D 快门进行局部定义的 UV 曝光时间，以制备 12 至 30 nm 之间变化的 Au NP 尺寸梯度。第三，这些双梯度纳米粒子排列在随后的反应离子蚀刻步骤中充当蚀刻掩模，提供纳米柱阵列。为了生成高度梯度，通过应用由硅晶片制成的快门来局部控制蚀刻时间。由于蚀刻工艺的高度灵活性，该制备路线适用于各种材料，例如盖玻片、硅、氧化硅、氮化硅和碳化硅。
A consecutive fabrication approach of independently tailored gradients of the topographical parameters distance, diameter and height in arrays of well-ordered nanopillars on smooth SiO 2–Si-wafers is presented. For this purpose, previously reported preparation techniques are further developed and combined. First, self-assembly of Au-salt loaded micelles by dip-coating with computer-controlled pulling-out velocities and subsequent hydrogen plasma treatment produce quasi-hexagonally ordered, 2-dimensional arrays of Au nanoparticles (NPs) with unidirectional variations of the interparticle distances along the pulling direction between 50–120 nm. Second, the distance (or areal density) gradient profile received in this way is superimposed with a diameter-controlled gradient profile of the NPs applying a selective photochemical growth technique. For demonstration, a 1D shutter is used for locally defined UV exposure times to prepare Au NP size gradients varying between 12 and 30 nm. Third, these double-gradient NP arrangements serve as etching masks in a following reactive ion etching step delivering arrays of nanopillars. For height gradient generation, the etching time is locally controlled by applying a shutter made from Si wafer piece. Due to the high flexibility of the etching process, the preparation route works on various materials such as cover slips, silicon, silicon oxide, silicon nitride and silicon carbide.
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10.1039/c3ta13728g
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影响因子：
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