Study of cesium and oxygen adsorption on surface of GaAlAs photocathode in ultra-high vacuum chamber
Study of cesium and oxygen adsorption on surface of GaAlAs photocathode in ultra-high vacuum chamber
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超高真空室内GaAlAs光电阴极表面铯和氧吸附研究
DOI：
10.1016/j.ijleo.2016.10.124
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发表时间：
2017-02
期刊：
影响因子：
3.1
通讯作者：
Chang Benkang
中科院分区：
文献类型：
--
作者：
Chen Xinlong;Tang Guanghua;Wang Humeng;Chang Benkang
研究了 GaAlAs 光电阴极上铯 (Cs) 和氧 (O) 的吸附机理。研究了Cs和O在GaAlAs表面的吸附模型，并基于Topping模型计算了电子亲和势随GaAlAs表面Cs覆盖度的变化。对GaAlAs和GaAs进行了Cs活化实验，并对GaAlAs光电阴极进行了不同热清洗温度下的Cs、O活化实验。测量并分析了实验中的光电流和光谱响应曲线。结果表明，电子亲和势随GaAlAs表面Cs覆盖度变化的Topping计算结果与实验结果一致，Cs激活后电子亲和势几乎达到导带底部。经过700℃热清洗处理的GaAlAs光电阴极在Cs、O活化后可以获得良好的光电性能。
The mechanism of cesium (Cs) and oxygen (O) adsorption on GaAlAs photocathode has been investigated. The models of Cs and O adsorption on GaAlAs surface are studied, and the electron affinity changing with Cs coverage on GaAlAs surface is calculated based on Topping model. The experiments of Cs activation on GaAlAs and GaAs are performed, and the Cs, O activation experiments with different heat cleaning temperatures are performed on GaAlAs photocathodes. The photocurrent and spectral response curves in the experiments are measured and analyzed. The results show that the Topping calculation of electron affinity changing with Cs coverage on GaAlAs surface is in consistent with the result of experiment, and the electron affinity nearly reaches the bottom of conduction band after the Cs activation. The GaAlAs phtocathode treated by 700 °C heat cleaning could obtain a good photoemission performance after Cs, O activation.
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影响因子：
1.8
作者：
A. N. Alexeev;S. Karpov;M. Maiorov;V. E. Myachin;Yu.V. Pogorelsky;I. Sokolov
通讯作者：
A. N. Alexeev;S. Karpov;M. Maiorov;V. E. Myachin;Yu.V. Pogorelsky;I. Sokolov
DOI：
10.1016/j.apsusc.2005.03.220
发表时间：
2005-09
期刊：
--
影响因子：
--
作者：
Xiao-qing Du;Benkang Chang
通讯作者：
Xiao-qing Du;Benkang Chang
DOI：
--
发表时间：
2012-01
期刊：
--
影响因子：
--
作者：
N. Chanlek
通讯作者：
N. Chanlek
较长波长阈值与较窄表面带隙的关系：对于 GaN 和 GaAlN 光电阴极
影响因子：
3.1
作者：
Yang Mingzhu;Chang Benkang;Rao Weifeng
通讯作者：
Rao Weifeng
DOI：
10.1098/rspa.1927.0025
发表时间：
1927-02
期刊：
Proceedings of The Royal Society A: Mathematical, Physical and Engineering Sciences
影响因子：
--
作者：
J. Topping
通讯作者：
J. Topping