Densification and grain growth of CuO-doped Pr6O11 varistors
Densification and grain growth of CuO-doped Pr6O11 varistors
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CuO 掺杂 Pr6O11 压敏电阻的致密化和晶粒生长
DOI：
10.1016/j.ceramint.2010.02.028
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发表时间：
2010-07
影响因子：
5.2
通讯作者：
Hua, Z. Q.
中科院分区：
文献类型：
--
作者：
Zhao, H. W.;Dong, L.;Wang, Y.;Li, T. Y.;Wang, H. Q.;Hua, Z. Q.
研究了CuO掺杂对Pr 6 O 11压敏电阻器微观结构和电性能的影响。通过常规陶瓷技术制备样品，并在空气中在1150°C下烧结2小时。用扫描电子显微镜（SEM）观察其微观结构。利用X射线衍射仪（XRD）和能谱仪（EDS）对产物的物相和化学成分进行了分析。结果表明，CuO的加入可使Pr 6 O 11压敏电阻的致密度提高到理论致密度的95.8%。CuO与Pr 6 O 11形成固溶体，当Pr 6 O 11含量达到0.5mol%时，Pr 2CuO 4在晶界析出。从I-V测量结果来看，少量CuO掺杂可以改善非线性电学性能。CuO含量的进一步增加导致非线性电性能的降低，这是由于晶粒表面上吸收的氧的消耗。
The effect of CuO doping on the microstructure and electrical properties of Pr6O11varistors was investigated. Samples were prepared by conventional ceramic techniques, and were sintered at 1150°C in air for 2h. The microstructure was investigated by scanning electron microscopy (SEM). The phases and chemical composition were analyzed by X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS). The results indicated that CuO can promote the densification of the Pr6O11-based varistors to 95.8% of the theoretical density. CuO forms a solid solution with Pr6O11up to 0.5mol%, above which Pr2CuO4precipitates in the grain boundary. From the I–V measurements, minor CuO doping can improve the nonlinear electrical properties. A further increase in CuO content induces a reduction in the nonlinear electrical properties due to the consumption of absorbed oxygen on the grain surfaces.
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影响因子：
3.2
作者：
L. Levinson;H. Philipp
通讯作者：
L. Levinson;H. Philipp
影响因子：
4.6
作者：
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通讯作者：
Xinsheng Yang;Yu Wang;Yong Zhao
影响因子：
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作者：
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DOI：
10.4028/www.scientific.net/kem.336-338.793
发表时间：
2007-04
期刊：
Key Engineering Materials
影响因子：
--
作者：
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通讯作者：
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影响因子：
5.4
作者：
Z. Kang;L. Eyring
通讯作者：
Z. Kang;L. Eyring