Analyzing carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells
Analyzing carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells
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分析 InAs/GaAs 量子点 p-i-n 结光伏电池中的载流子逃逸机制
DOI：
10.1063/1.4881181
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发表时间：
2014
影响因子：
4
通讯作者：
M. Doty
中科院分区：
文献类型：
--
作者：
Diane G. Sellers;S. Polly;S. Hubbard;M. Doty
中间带太阳能电池（IBSC）是第三代光伏（PV）器件，其可以收集通常在单结太阳能电池中不被吸收的亚带隙光子。尽管预测IBSC装置的总太阳能转换效率大幅增加，但在实际装置中实现这些效率增益仍然存在重大挑战。我们评估载流子逃逸机制的InAs/GaAs量子点中间带p-i-n结光伏器件使用亚带隙照明下的光电流测量。我们发现，亚带隙光子产生光电流通过双光子吸收过程，但载流子捕获和再捕获限制了整体光电流。结果确定了一个关键的障碍，必须克服，以实现优于单结光伏电池的中间带设备。
Intermediate band solar cells (IBSCs) are third-generation photovoltaic (PV) devices that can harvest sub-bandgap photons normally not absorbed in a single-junction solar cell. Despite the large increase in total solar energy conversion efficiency predicted for IBSC devices, substantial challenges remain to realizing these efficiency gains in practical devices. We evaluate carrier escape mechanisms in an InAs/GaAs quantum dot intermediate band p-i-n junction PV device using photocurrent measurements under sub-bandgap illumination. We show that sub-bandgap photons generate photocurrent through a two-photon absorption process, but that carrier trapping and retrapping limit the overall photocurrent. The results identify a key obstacle that must be overcome in order to realize intermediate band devices that outperform single junction photovoltaic cells.
直接硅掺杂 InAs/GaNAs 应变补偿量子点太阳能电池的电流增强
DOI：
--
发表时间：
2011
期刊：
影响因子：
--
作者：
Y. Shoji;T. Morioka;and Y. Okada
通讯作者：
and Y. Okada
影响因子：
3.2
作者：
Antolin, E.;Marti, A.;Luque, A.
通讯作者：
Luque, A.