Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates
Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates
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蓝宝石衬底上硅注入 AlN 层电特性的温度依赖性
DOI：
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发表时间：
2023
影响因子：
2.3
通讯作者：
T. Shibata
中科院分区：
文献类型：
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作者：
H. Okumura;Y. Watanabe;T. Shibata
氮化铝具有很大的禁带宽度，是最有吸引力的高温材料之一。然而，AlN器件在高温下的性能受到电气表征系统的技术问题的限制。在这里，我们表明，肖特基势垒二极管（SBD）和金属-半导体场效应晶体管与Si注入AlN沟道可以分别在1100 K和1000 K工作。AlN SBD的击穿电压和势垒高度分别为610 V和3.5 eV。我们发现，AlN上的Ni接触的高势垒高度和热稳定性极大地促进了器件的高温操作。
AlN with a large bandgap energy is one of the most attractive materials for high-temperature applications. However, performance of AlN devices at high temperatures has been limited by technical problems with electrical characterization systems. Here, we show that Schottky-barrier diodes (SBDs) and metal-semiconductor field-effect transistors with Si-implanted AlN channels can operate at 1100 K and 1000 K, respectively. The breakdown voltage and barrier height of the AlN SBD were 610 V and 3.5 eV, respectively. We found that the high barrier height and thermal stability of the Ni contact on AlN greatly contributed to high-temperature operation of the devices.
通过非平衡工艺实现 Ge 掺杂 AlN 的高电导率
影响因子：
4
作者：
Bagheri, Pegah;Quiñones-Garcia, Cristyan;Khachariya, Dolar;Loveless, James;Guan, Yan;Rathkanthiwar, Shashwat;Reddy, Pramod;Kirste, Ronny;Mita, Seiji;Tweedie, James
通讯作者：
Tweedie, James