Deflection of high-intensity pulsed ion beam in focusing magnetically insulated ion diode with a passive anode

Deflection of high-intensity pulsed ion beam in focusing magnetically insulated ion diode with a passive anode
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带无源阳极的聚焦磁绝缘离子二极管中高强度脉冲离子束的偏转

DOI:
10.1063/1.4968837
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发表时间:
2016-12
期刊:
影响因子:
2.2
通讯作者:
Lei M. K.
Lei M. K.
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Zhu X. P.;Zhang Q.;Ding L.;Zhang Z. C.;Yu N.;Pushkarev A.;Lei M. K.

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在两种磁绝缘离子二极管(MID)中产生了100 ns量级脉冲的聚焦强流脉冲离子束(HIPIB),电子分别与外部磁场和自磁场绝缘。用于离子束产生的阳极等离子体形成是基于两种类型的MID中的不同过程,作为在单极脉冲模式下操作的聚合物涂覆的阳极上的表面击穿用于外部磁场MID,以及在双极脉冲模式下石墨阳极上的爆炸性电子发射用于自磁场MID。在200-300 kV的加速电压和120-150 ns的脉冲持续时间下,每个脉冲的典型能量密度在3-6 J/cm 2的范围内。HIPIB的空间偏差通过使用红外诊断方法测量能量密度分布来评估,该方法考虑了离子束传播到焦平面期间的中和,空间分辨率为1 mm。对于外磁场MID,离子束偏差约为±1.5 mm,对于自磁场MID,离子束偏差约为±2.5 mm,导致焦点处10 mm范围内能量密度的波动分别为1%-12%和9%-27%。结果表明,束斑不同部分的位移是不同步发生的,主要是由于等离子体的产生和膨胀以及离子束从阳极-阴极间隙中的引出等本征二极管过程,而磁场在传输区的影响可以忽略不计。离子束空间偏移对离子束的稳定性有重要影响,建议通过改进二极管工艺来提高离子束的稳定性。
The focused high-intensity pulsed ion beam (HIPIB) of 100 ns order pulse is generated with respect to its spatial stability in two types of magnetically insulated ion diodes (MIDs) with geometrical focusing configuration using the passive anode, i.e., insulation of electrons with an external magnetic-field and a self-magnetic field, respectively. Anode plasma formation for the ion beam generation is based on different processes in the two types of MIDs, as the surface breakdown on the polymer-coated anode operated in the unipolar pulse mode for the external-magnetic field MID and the explosive electron emission on the graphite anode in the bipolar-pulse mode for the self-magnetic field MID. Typical energy density per pulse is in the range of 3–6 J/cm2, at an accelerating voltage of 200–300 kV with a pulse duration of 120–150 ns. The spatial deviations of the HIPIB is evaluated by measuring the energy density distribution by using an infrared diagnostic method considering neutralizing during the ion beam propagation to the focal plane with a spatial resolution of 1 mm. The ion beam deviation is about ±1.5 mm for the external-magnetic field MID and ±2.5 mm for the self-magnetic field MID, leading to a fluctuation in the energy density of 1%–12%, and 9%–27% within a 10 mm range at the focal point, respectively. It is revealed that the displacement of different parts of a beam spot occurs nonsynchronously, mainly attributable to the intrinsic diode processes of plasma generation and expansion, and ion beam extraction from the anode–cathode gap, while the influence of magnetic field in the transportation region is negligible. The ion beam spatial deviation has a major influence on the shot-to-shot stability of ion beam, and it is suggested that the stability can be enhanced via diode process improvement.
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影响因子: 1.7
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