Compositional dependence of the band-gap of Ge1−x−ySixSny alloys
Compositional dependence of the band-gap of Ge1−x−ySixSny alloys
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Ge1−x−ySixSny 合金带隙的成分依赖性
DOI：
10.1063/1.4953784
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发表时间：
2016
影响因子：
4
通讯作者：
J. Schulze
中科院分区：
文献类型：
--
作者：
Torsten Wendav;I. Fischer;M. Montanari;M. Zoellner;W. Klesse;G. Capellini;N. V. D. Driesch;M. Oehme;D. Buca;K. Busch;J. Schulze
iv族半导体合金Ge1−x−ySixSny最近因其在光电子学、电子学和光伏学方面的潜在应用而引起了人们的极大兴趣。在这里，我们研究了分子束外延生长的Ge1−x−ySixSny合金，其晶格与Ge匹配，Si和Sn浓度分别高达42%和10%。采用卢瑟福后向散射/通道光谱分析了样品的成分和晶体质量，x射线衍射分析了样品的应变，光致发光光谱分析了样品的带隙能。此外，利用实验提取的材料参数确定了SiSn的弯曲，并对其光学跃迁能进行了预测。
The group-IV semiconductor alloy Ge1−x−ySixSny has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge1−x−ySixSny alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.
影响因子：
3.8
作者：
Koerner, Roman;Oehme, Michael;Schulze, Joerg
通讯作者：
Schulze, Joerg