Dislocation Analysis of p Type and Insulating HPHT Diamond Seed Crystals
Dislocation Analysis of p Type and Insulating HPHT Diamond Seed Crystals
复制标题
p 型和绝缘 HPHT 金刚石晶种的位错分析
DOI：
10.4028/www.scientific.net/msf.924.208
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Hiroyuki Takahashi
中科院分区：
文献类型：
--
作者：
S. Shikata;E. Kamei;K. Yamaguchi;Y. Tsuchida;Hiroyuki Takahashi
使用 SR 光源通过 X 射线形貌分析 p+ 高温高压 (HPHT) 籽晶的位错，并与绝缘 HPHT 籽晶的位错进行比较。典型绝缘 HPHT 基板的位错密度约为 250 cm-2。几年来，在将典型绝缘 HPHT 基板的位错密度从 104–105 cm-2 降低到 102 cm-2 方面取得了重大进展。 p+ HPHT 籽晶具有独特的性能，特别是在堆垛层错 (SF) 数量方面，以及非常清晰的生长扇区边界，位错密度高达 3000 cm-2。由于长期以来大多数研究活动都集中在HPHT生长技术中的“绝缘衬底”上，因此p+ HPHT晶体的生长需要克服一些挑战。
The dislocation of a p+ high-temperature, high-pressure (HPHT) seed crystal is analyzed by X-ray topography using a SR light source, and compared with that of an insulating HPHT seed crystal. The dislocation density of the typical insulating HPHT substrate is around 250 cm-2. Over several years, significant progress has been achieved in reducing the dislocation density of the typical insulating HPHT substrate from the order of 104–105 cm-2 to 102 cm-2. The p+ HPHT seed crystal has unique properties, especially in terms of the number of stacking faults (SFs), and very clear growth sector boundaries with dislocation densities of up to 3000 cm-2. As most research activities have been focused on the “insulating substrate” in HPHT growth technology for a long time, several challenges need to be overcome with respect to the growth of a p+ HPHT crystal.
影响因子：
5
作者：
Schreck, Matthias;Asmussen, Jes;Fujimori, Naoji
通讯作者：
Fujimori, Naoji